Experimental observation of gapped topological surface states in Sb-doped MnBi4Te7

Qiao，Yuxi1,2; Jiang，Zhicheng1,3; Chen，Bo4; Tao，Zicheng5; Liu，Zhonghao6; Zhang，Fayuan7; Cho，Soohyun3; Liu，Zhengtai1,8; Guo，Yanfeng5,9; Song，Fengqi4; Fei，Fucong10; Liu，Jishan1,8; Shen，Dawei3

2024-01-29

10.1063/5.0187830

Applied Physics Letters   影响因子和分区

0003-6951

The realization of intrinsic magnetic topological insulators offers an ideal platform to investigate high-temperature quantum anomalous Hall effect as well as quantum devices. The family of MnBiTe(BiTe) has been confirmed that it belongs to this system. However, whether there is a bandgap in the surface states remains controversial. In this work, the ferromagnetism in Sb-doped MnBiTe is confirmed by magnetic transport. Utilizing angle-resolved photoemission spectroscopy, we demonstrate the nontrivial topology in Mn(BiSb)Te with an energy gap on the MnBiTe termination. As well, we detect distinct topological surface states on two different terminations. Our results provide spectral evidence of an energy gap in the topological surface states.

SCI ; EI

英语

其他

PHYSICS

2-s2.0-85183957972

Scopus

1.State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai,200050,China
2.Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing,100049,China
3.National Synchrotron Radiation Laboratory,School of Nuclear Science and Technology,University of Science and Technology of China,Hefei,230026,China
4.National Laboratory of Solid State Microstructures,Collaborative Innovation Center of Advanced Microstructures,College of Physics,Nanjing University,Nanjing,210093,China
5.School of Physical Science and Technology,ShanghaiTech University,Shanghai,201210,China
6.Institute of High-Pressure Physics,School of Physical Science and Technology,Ningbo University,Ningbo,315211,China
7.Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
8.Shanghai Synchrotron Radiation Facility,Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai,201210,China
9.ShanghaiTech Laboratory for Topological Physics,ShanghaiTech University,Shanghai,201210,China
10.School of Materials Science and Intelligent Engineering,Nanjing University,Suzhou,215163,China

Qiao，Yuxi,Jiang，Zhicheng,Chen，Bo,et al. Experimental observation of gapped topological surface states in Sb-doped MnBi4Te7[J]. Applied Physics Letters,2024,124(5).

Qiao，Yuxi.,Jiang，Zhicheng.,Chen，Bo.,Tao，Zicheng.,Liu，Zhonghao.,...&Shen，Dawei.(2024).Experimental observation of gapped topological surface states in Sb-doped MnBi4Te7.Applied Physics Letters,124(5).

Qiao，Yuxi,et al."Experimental observation of gapped topological surface states in Sb-doped MnBi4Te7".Applied Physics Letters 124.5(2024).