Decoupling Carrier-Phonon Scattering Boosts the Thermoelectric Performance of n-Type GeTe-Based Materials

Wang，De Zhuang1; Liu，Wei Di2,3; Mao，Yuanqing4,5; Li，Shuai1; Yin，Liang Cao1; Wu，Hao1; Li，Meng3; Wang，Yifeng6; Shi，Xiao Lei3; Yang，Xiaoning1; Liu，Qingfeng1; Chen，Zhi Gang3

2024-01-17

10.1021/jacs.3c12546

Journal of the American Chemical Society   影响因子和分区

0002-7863

1520-5126

The coupled relationship between carrier and phonon scattering severely limits the thermoelectric performance of n-type GeTe materials. Here, we provide an efficient strategy to enlarge grains and induce vacancy clusters for decoupling carrier-phonon scattering through the annealing optimization of n-type GeTe-based materials. Specifically, boundary migration is used to enlarge grains by optimizing the annealing time, while vacancy clusters are induced through the aggregation of Ge vacancies during annealing. Such enlarged grains can weaken carrier scattering, while vacancy clusters can strengthen phonon scattering, leading to decoupled carrier-phonon scattering. As a result, a ratio between carrier mobility and lattice thermal conductivity of ∼492.8 cm V s W K and a peak ZT of ∼0.4 at 473 K are achieved in GePbBiTe. This work reveals the critical roles of enlarged grains and induced vacancy clusters in decoupling carrier-phonon scattering and demonstrates the viability of fabricating high-performance n-type GeTe materials via annealing optimization.

SCI ; EI

英语

其他

2-s2.0-85182008175

Scopus

1.State Key Laboratory of Materials-Oriented Chemical Engineering,College of Chemical Engineering,Nanjing Tech University,Nanjing,211816,China
2.Australian Institute for Bioengineering and Nanotechnology,The University of Queensl,Brisbane,4072,Australia
3.School of Chemistry and Physics and Centre for Materials Science,Queensland University of Technology,Brisbane,4000,Australia
4.School of Mechanical and Mining Engineering,The University of Queensl,Brisbane,4072,Australia
5.Department of Physics and Guangdong Provincial Key Laboratory of Computational Science and Material Design,Southern University of Science and Technology,Shenzhen,518055,China
6.College of Materials Science and Engineering,Nanjing Tech University,Nanjing,211816,China

Wang，De Zhuang,Liu，Wei Di,Mao，Yuanqing,et al. Decoupling Carrier-Phonon Scattering Boosts the Thermoelectric Performance of n-Type GeTe-Based Materials[J]. Journal of the American Chemical Society,2024,146(2):1681-1689.

Wang，De Zhuang.,Liu，Wei Di.,Mao，Yuanqing.,Li，Shuai.,Yin，Liang Cao.,...&Chen，Zhi Gang.(2024).Decoupling Carrier-Phonon Scattering Boosts the Thermoelectric Performance of n-Type GeTe-Based Materials.Journal of the American Chemical Society,146(2),1681-1689.

Wang，De Zhuang,et al."Decoupling Carrier-Phonon Scattering Boosts the Thermoelectric Performance of n-Type GeTe-Based Materials".Journal of the American Chemical Society 146.2(2024):1681-1689.