题名 | Suppressing Surface Ligand-to-Metal Charge Transfer toward Stable High-Voltage LiCoO2 |
作者 | |
通讯作者 | Zhao,Enyue; Han,Songbai |
发表日期 | 2024-01-10
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DOI | |
发表期刊 | |
ISSN | 1944-8244
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EISSN | 1944-8252
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卷号 | 16期号:1页码:1757-1766 |
摘要 | Increasing the charging cutoff voltage is a viable approach to push the energy density limits of LiCoO and meet the requirements of the rapid development of 3C electronics. However, an irreversible oxygen redox is readily triggered by the high charging voltage, which severely restricts practical applications of high-voltage LiCoO. In this study, we propose a modification strategy via suppressing surface ligand-to-metal charge transfer to inhibit the oxygen redox-induced structure instability. A d electronic structure Zr is selected as the charge transfer insulator and successfully doped into the surface lattice of LiCoO. Using a combination of theoretical calculations, ex situ X-ray absorption spectra, and in situ differential electrochemical mass spectrometry analysis, our results show that the modified LiCoO exhibits suppressed oxygen redox activity and stable redox electrochemistry. As a result, it demonstrates a robust long-cycle lattice structure with a practically eliminated voltage decay (0.17 mV/cycle) and an excellent capacity retention of 89.4% after 100 cycles at 4.6 V. More broadly, this work provides a new perspective on suppressing the oxygen redox activity through modulating surface ligand-to-metal charge transfer for achieving a stable high-voltage ion storage structure. |
关键词 | |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
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学校署名 | 第一
; 通讯
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Scopus记录号 | 2-s2.0-85181843185
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来源库 | Scopus
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引用统计 |
被引频次[WOS]:2
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/701591 |
专题 | 理学院_物理系 前沿与交叉科学研究院 |
作者单位 | 1.Academy for Advanced Interdisciplinary Studies & Department of Physics,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China 2.Songshan Lake Materials Laboratory,Dongguan,Guangdong,523808,China 3.Spallation Neutron Source Science Center,Dongguan,Guangdong,523803,China 4.Institute of Physics,Chinese Academy of Sciences,Beijing,100190,China 5.Institute of High Energy Physics,Chinese Academy of Sciences,Beijing,100049,China 6.Eastern Institute for Advanced Study,Ningbo,315200,China 7.School of Materials Science and Engineering,Peking University,Beijing,100871,China |
第一作者单位 | 物理系; 前沿与交叉科学研究院 |
通讯作者单位 | 物理系; 前沿与交叉科学研究院 |
第一作者的第一单位 | 物理系; 前沿与交叉科学研究院 |
推荐引用方式 GB/T 7714 |
Yang,Zhiqiang,Zhao,Enyue,Li,Na,et al. Suppressing Surface Ligand-to-Metal Charge Transfer toward Stable High-Voltage LiCoO2[J]. ACS Applied Materials and Interfaces,2024,16(1):1757-1766.
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APA |
Yang,Zhiqiang.,Zhao,Enyue.,Li,Na.,Gao,Lei.,He,Lunhua.,...&Han,Songbai.(2024).Suppressing Surface Ligand-to-Metal Charge Transfer toward Stable High-Voltage LiCoO2.ACS Applied Materials and Interfaces,16(1),1757-1766.
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MLA |
Yang,Zhiqiang,et al."Suppressing Surface Ligand-to-Metal Charge Transfer toward Stable High-Voltage LiCoO2".ACS Applied Materials and Interfaces 16.1(2024):1757-1766.
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