Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth

Zhang，Jun; Zhao，Junlei; Chen，Junting; Hua，Mengyuan

2024-01-08

10.1063/5.0177093

Applied Physics Letters   影响因子和分区

0003-6951

β-GaO has been subjected to intense research interest as an ultrawide bandgap semiconductor. The epitaxial growth technique of β-GaO thin films plays a fundamental and vital role in GaO-based device fabrication. In this work, the epitaxial growth mechanisms of β-GaO on four low-Miller-index facets, (100), (010), (001), and ( 2 ¯ 01 ), are systematically explored using large-scale machine-learning molecular dynamics simulations at the atomic scale. The simulations reveal that the migration of the face-centered cubic stacking O sublattice plays a dominant role in the different growth mechanisms between the (100)/(010)/(001) and ( 2 ¯ 01 ) orientations. The resultant complex combinations of the stacking faults and twin boundaries are carefully identified and show good agreement with experimental observations and ab initio calculations. Our results provide useful insights into the gas-phase epitaxial growth of β-GaO thin films and suggest possible ways to tailor its properties for specific applications.

EI

英语

第一 ; 通讯

PHYSICS

2-s2.0-85181978200

Scopus

Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China

Zhang，Jun,Zhao，Junlei,Chen，Junting,et al. Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth[J]. Applied Physics Letters,2024,124(2).

Zhang，Jun,Zhao，Junlei,Chen，Junting,&Hua，Mengyuan.(2024).Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth.Applied Physics Letters,124(2).

Zhang，Jun,et al."Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth".Applied Physics Letters 124.2(2024).