南方科技大学知识苑(SUSTech KC): A Physical Charge-Based Analytical Threshold Voltage Model for Cryogenic CMOS Design

题名	A Physical Charge-Based Analytical Threshold Voltage Model for Cryogenic CMOS Design
作者	Su，Hao1 ; Cai，Yiyuan1 ; Zhou，Shenghua2 ; Hu，Guangchong3 ; He，Yu2 ; Xie，Yunfeng1 ; Lin，Yuhuan1 ; Li，Chunhui 4 ; Zhao，Tianqi4 ; Lan，Jun 1 ; Wang，Wenhui 1 ; Li，Wenxin 1 ; Zhou，Feichi1 ; Liu，Xiaoguang1 ; Lin，Longyang1 ; Li，Yida1 ; Yu，Hongyu1 ; Chen，Kai1
发表日期	2024
DOI	10.1109/JEDS.2024.3359664
发表期刊	IEEE Journal of the Electron Devices Society 影响因子和分区
ISSN	2168-6734
EISSN	2168-6734
卷号	PP 期号:99页码:1-1
摘要	This paper proposes a physical charge-based analytical MOSFET threshold voltage model that explicitly incorporates interface-trapped charges which have been identified as playing a dominant role in defining threshold voltage trends in deep cryogenic temperatures. The model retains standard threshold voltage definition by various charges across the MOSFET capacitor while being analytical in its form, therefore, suitable for cryogenic CMOS VLSI design. Consequently, a model covering each and all above characteristics is proposed for the first time. Excellent fit between the model and measurement data from 180-nm bulk foundry devices is shown from room temperature to 4 K.
关键词	analytical Analytical models Behavioral sciences bulk CMOS compact cryogenic Cryogenics interface traps model MOSFET circuits Semiconductor device modeling Standards threshold voltage Threshold voltage universal
相关链接	[Scopus记录]
收录类别	EI
语种	英语
学校署名	第一
Scopus记录号	2-s2.0-85184324108
来源库	Scopus
全文链接	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10416243
引用统计	被引频次[WOS]：1
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/701659
专题	工学院_深港微电子学院量子科学与工程研究院
作者单位	1.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China 2.Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, China 3.International Quantum Academy, Shenzhen, China 4.Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, China
第一作者单位	深港微电子学院
第一作者的第一单位	深港微电子学院
推荐引用方式 GB/T 7714	Su，Hao,Cai，Yiyuan,Zhou，Shenghua,et al. A Physical Charge-Based Analytical Threshold Voltage Model for Cryogenic CMOS Design[J]. IEEE Journal of the Electron Devices Society,2024,PP(99):1-1.
APA	Su，Hao.,Cai，Yiyuan.,Zhou，Shenghua.,Hu，Guangchong.,He，Yu.,...&Chen，Kai.(2024).A Physical Charge-Based Analytical Threshold Voltage Model for Cryogenic CMOS Design.IEEE Journal of the Electron Devices Society,PP(99),1-1.
MLA	Su，Hao,et al."A Physical Charge-Based Analytical Threshold Voltage Model for Cryogenic CMOS Design".IEEE Journal of the Electron Devices Society PP.99(2024):1-1.