Stacking-dependent exchange bias in two-dimensional ferromagnetic/antiferromagnetic bilayers

Li，Huiping1,2; Pan，Shuaiwei2; Wang，Zhe3; Xiang，Bin4; Zhu，Wenguang1,2

2024

10.1088/1674-1056/ad053d

Chinese Physics B   影响因子和分区

1674-1056

2058-3834

A clear microscopic understanding of exchange bias is crucial for its application in magnetic recording, and further progress in this area is desired. Based on the results of our first-principles calculations and Monte Carlo simulations, we present a theoretical proposal for a stacking-dependent exchange bias in two-dimensional compensated van der Waals ferromagnetic/antiferromagnetic bilayer heterostructures. The exchange bias effect emerges in stacking registries that accommodate inhomogeneous interlayer magnetic interactions between the ferromagnetic layer and different spin sublattices of the antiferromagnetic layer. Moreover, the on/off switching and polarity reversal of the exchange bias can be achieved by interlayer sliding, and the strength can be modulated using an external electric field. Our findings push the limits of exchange bias systems to extreme bilayer thickness in two-dimensional van der Waals heterostructures, potentially stimulating new experimental investigations and applications.

asymmetric magnetic interaction exchange bias two-dimensional ferromagnetic/antiferromagnetic bilayers

SCI ; EI

英语

其他

2-s2.0-85182589790

Scopus

1.International Center for Quantum Design of Functional Materials (ICQD),Hefei National Research Center for Physical Sciences at the Microscale,University of Science and Technology of China,Hefei,230026,China
2.Department of Physics,University of Science and Technology of China,Hefei,230026,China
3.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
4.Department of Materials Science & Engineering,University of Science and Technology of China,Hefei,230026,China

Li，Huiping,Pan，Shuaiwei,Wang，Zhe,et al. Stacking-dependent exchange bias in two-dimensional ferromagnetic/antiferromagnetic bilayers[J]. Chinese Physics B,2024,33(1).

Li，Huiping,Pan，Shuaiwei,Wang，Zhe,Xiang，Bin,&Zhu，Wenguang.(2024).Stacking-dependent exchange bias in two-dimensional ferromagnetic/antiferromagnetic bilayers.Chinese Physics B,33(1).

Li，Huiping,et al."Stacking-dependent exchange bias in two-dimensional ferromagnetic/antiferromagnetic bilayers".Chinese Physics B 33.1(2024).