南方科技大学知识苑(SUSTech KC): Recess-Patterned Ohmic Contact Technology for AlGaN/GaN Heterostructures

题名	Recess-Patterned Ohmic Contact Technology for AlGaN/GaN Heterostructures
作者	Tang, Xinyi 1 ; Tao, Nick 2; Jiang, Yang1,3 ; Wang, Qing1,4,5,6 ; Du, Fangzhou 1 ; Yu, Hongyu1,4,5,6
通讯作者	Tang, Xinyi; Wang, Qing; Yu, Hongyu
DOI	10.1109/ASICON58565.2023.10396123
发表日期	2023
会议名称	15th IEEE International Conference on ASIC, ASICON 2023
ISSN	2162-7541
EISSN	2162-755X
ISBN	9798350312980
会议录名称	Proceedings of International Conference on ASIC
页码	1-4
会议日期	October 24, 2023 - October 27, 2023
会议地点	Nanjing, China
会议录编者/会议主办者	Fudan University; IEEE Beijing Section; Nanjing University; National IC Innovation Center
出版者	IEEE Computer Society
摘要	In this paper, a recess-patterned ohmic contact technology is presented, which shows a promising way to reduce the ohmic contact resistance for AlGaN/GaN heterostructures. The influences of annealing temperature, recessed-pattern size and shape are investigated, respectively. The mean value of ohmic contact resistance (RC) is 0.345 Ω·mm, which is 33.8% lower than conventional non-recessed metal-stacking scheme. The Technology Computer Aided Design (TCAD) simulation results indicate the two-dimensional electron gas (2-DEG) concentration significantly increasing near the edge of recessed-pattern. This effect shortens the distance between ohmic contact metal and 2-DEG, which may effectively contribute to the superior ohmic contact performance. © 2023 IEEE.
关键词	Recess-Patterned Ohmic contact resistance AlGaN/GaN heterostructures TCAD simulation two-dimensional electron gas
学校署名	第一 ; 通讯
语种	英语
相关链接	[IEEE记录]
收录类别	EI
资助项目	VI. ACKNOWLEDGEMENT This work was supported by Fabrication of Normally-Off GaN Devices based on In-situ SiNx Passivation and Selective Area Growth Recessed-Gate Techniques and the Reliability Study (National Natural Science Foundation of China, Grant No: 62274082), Research on mechanism of Source/Drain ohmic contact and the related GaN p-FET (Grant No: 2023A1515030034), Research on the fabrication and mechanism of GaN power and RF devices (Grant No: JCYJ20200109141233476), Research on the GaN Chip for 5G Applications (Grant No: JCYJ20210324120409025) and the assistance of SUSTech Core Research Facilities.
EI入藏号	20240715533155
来源库	EV Compendex
全文链接	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10396123
引用统计
成果类型	会议论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/706519
专题	工学院_深港微电子学院
作者单位	1.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China 2.Maxscend Microelectronics Company Limited, Wuxi, China 3.The University of Hong Kong, Department of Electrical and Electronic Engineering, Hong Kong, Hong Kong 4.Southern University of Science and Technology, Eng. Res. Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Shenzhen, China 5.Southern University of Science and Technology, GaN Device Engineering Technology Research Center of Guangdong, Shenzhen, China 6.Southern University of Science and Technology, The Key Laboratory of the Third Generation Semi-Conductor, Shenzhen, China
第一作者单位	深港微电子学院
通讯作者单位	深港微电子学院; 南方科技大学
第一作者的第一单位	深港微电子学院
推荐引用方式 GB/T 7714	Tang, Xinyi,Tao, Nick,Jiang, Yang,et al. Recess-Patterned Ohmic Contact Technology for AlGaN/GaN Heterostructures[C]//Fudan University; IEEE Beijing Section; Nanjing University; National IC Innovation Center:IEEE Computer Society,2023:1-4.