南方科技大学知识苑(SUSTech KC): Multi-level resistive switching characteristics correlated with microscopic filament geometry in TMO-RRAM

题名	Multi-level resistive switching characteristics correlated with microscopic filament geometry in TMO-RRAM
作者	Chen，B.1,2; Kang，J. F.1; Huang，P.1; Deng，Y. X.1; Gao，B.1; Liu，R.1; Zhang，F. F.1; Liu，L. F.1; Liu，X. Y.1; Tran，X. A.3; Yu，H. Y.4
DOI	10.1109/VLSI-TSA.2013.6545591
发表日期	2013
会议录名称	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
摘要	For the first time, we report that the resistive switching behaviors of the multi-level resistance states can be influenced by the operation mode. Simulations reveal that this is due to the different geometry of the conductive filament in the multi-level resistance states stemmed from the different operation mode. Based on this understanding, improved stability and uniformity of the medium resistance states during switching process are predicted and experimentally verified. © 2013 IEEE.
学校署名	其他
语种	英语
相关链接	[Scopus记录]
收录类别	EI
EI入藏号	20133316603295
EI分类号	Data Storage, Equipment and Techniques:722.1
Scopus记录号	2-s2.0-84881130844
来源库	Scopus
引用统计	被引频次[WOS]：0
成果类型	会议论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/70870
专题	南方科技大学
作者单位	1.Institute of Microelectronics,Peking University,Beijing 100871,China 2.Peking University Shenzhen Graduate School,China 3.School of EEE,Nanyang Technological University,Singapore 639798,Singapore 4.South University of Science and Technology of China,China
推荐引用方式 GB/T 7714	Chen，B.,Kang，J. F.,Huang，P.,et al. Multi-level resistive switching characteristics correlated with microscopic filament geometry in TMO-RRAM[C],2013.