Design guidelines for (111) Si inclined nanohole arrays in thin film solar cells

Hong，Lei1,2; Rusli，1; Wang，Xincai2; Zheng，Hongyu2; Wang，Hao1; Yu，Hongyu3

10.1109/INEC.2013.6466069

2013

0891-7736

Proceedings - Winter Simulation Conference

431-433

Singapore, Singapore

Institute of Electrical and Electronics Engineers Inc.

In this paper, a systematic design and analysis of slanting silicon nanohole structure is simulated using the finite element method. The slanting nanohole structure is based on the Si (111) wafer. The impact of the hole diameter and structural periodicity has been investigated. It is found that the absorption is significantly enhanced due to the strong light trapping ability of slanting nanohole structure. The optimal structural parameters are achieved when the periodicity is 700 nm and the diameter to periodicity ratio is 0.85. The highest ultimate efficiency achieved is 32.9 %, higher than that of vertical nanohole structure with a value of 29.7%. © 2013 IEEE.

light absorption silicon nanohole ultimate efficiency and scattering

其他

英语

EI

20131116117557

Efficiency ; Light absorption ; Nanoelectronics ; Silicon wafers ; Structural optimization ; Thin film solar cells

Solar Cells:702.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Nanotechnology:761 ; Production Engineering:913.1 ; Optimization Techniques:921.5

2-s2.0-84874765908

Scopus

1.School of Electrical and Electronic Engineering,Nanyang Technological University,50 Nanyang Avenue,Singapore,Singapore
2.Singapore Institute of Manufacturing Technology,A STAR (Agency for Science, Technology and Research),71 Nanyang Drive,Singapore,Singapore
3.South University of Science and Technology of China,Shenzhen,China

Hong，Lei,Rusli，,Wang，Xincai,et al. Design guidelines for (111) Si inclined nanohole arrays in thin film solar cells[C]:Institute of Electrical and Electronics Engineers Inc.,2013:431-433.