南方科技大学知识苑(SUSTech KC): A self-rectifying and forming-free HfOx based-high performance unipolar RRAM

题名	A self-rectifying and forming-free HfOx based-high performance unipolar RRAM
作者	Yu，H. Y.1 ; Tran，X. A.1,2
DOI	10.1109/ICSICT.2012.6467660
发表日期	2012
会议录名称	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
会议地点	Xi'an, China
出版者	IEEE Computer Society
摘要	We report a forming-free and self-rectifying unipolar HfO based RRAM with high performance. Highlight of the demonstrated RRAM include 1) Fab-available materials and CMOS process, 2) excellent self-rectifying behavior in LRS (>10@ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices. © 2012 IEEE.
学校署名	第一
语种	英语
相关链接	[Scopus记录]
收录类别	EI
EI入藏号	20131116120219
EI主题词	Hafnium compounds
EI分类号	Semiconductor Devices and Integrated Circuits:714.2 ; Data Storage, Equipment and Techniques:722.1
Scopus记录号	2-s2.0-84874876224
来源库	Scopus
引用统计	被引频次[WOS]：0
成果类型	会议论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/70876
专题	南方科技大学
作者单位	1.South University of Science and Technology of China,Shenzhen, 518055,China 2.School of EEE,Nanyang Technological University,50 Nanyang Avenue,Singapore 639798,Singapore
第一作者单位	南方科技大学
第一作者的第一单位	南方科技大学
推荐引用方式 GB/T 7714	Yu，H. Y.,Tran，X. A.. A self-rectifying and forming-free HfOx based-high performance unipolar RRAM[C]:IEEE Computer Society,2012.