Oxide-based RRAM: A novel defect-engineering-based implementation for multilevel data storage

Kang，J. F.1; Gao，B.1; Chen，B.1; Liu，L. F.1; Liu，X. Y.1; Yu，H. Y.2; Wang，Z. R.3; Yu，B.4

10.1109/IMW.2012.6213664

2012

2012 4th IEEE International Memory Workshop, IMW 2012

Milano, Italy

IEEE Computer Society

A novel strategy based on defect engineering is proposed for high-performance multilevel data storage in oxide-based resistive random access memory (RRAM). Key innovations are (i) material-oriented cell engineering for desired modification of physical locations of generated oxygen vacancies in resistive switching layer and (ii) innovative operation scheme to control the distribution of oxygen vacancy conducting filaments during the switching. Excellent memory performance with four-level data storage is successfully demonstrated in hafnium-oxide-based RRAM devices, indicating the viability of the proposed engineering design strategy. © 2012 IEEE.

defect-engineering multilevel data storage Resistive switching memory (RRAM)

其他

英语

EI

20123015282265

Defects ; Hafnium oxides ; Oxygen vacancies ; RRAM ; Storage (materials)

Biomedical Engineering:461.1 ; Storage:694.4 ; Chemical Products Generally:804 ; Crystalline Solids:933.1 ; Materials Science:951

2-s2.0-84864137324

Scopus

1.Institute of Microelectronics,Peking University,Beijing 100871,China
2.South University of Science and Technology of China,Shenzhen 518055,China
3.School of EEE,Nanyang Technological University,Singapore 639798,Singapore
4.College of Nanoscale Science and Engineering,State University of New York,Albany, NY 12203,United States

Kang，J. F.,Gao，B.,Chen，B.,et al. Oxide-based RRAM: A novel defect-engineering-based implementation for multilevel data storage[C]:IEEE Computer Society,2012.