南方科技大学知识苑(SUSTech KC): Low-frequency noise in oxide-based (TiN/HfO x/Pt) resistive random access memory cells

题名	Low-frequency noise in oxide-based (TiN/HfO x/Pt) resistive random access memory cells
作者	Fang，Z.1,2; Yu，H. Y.3 ; Chroboczek，J. A.4; Ghibaudo，G.4; Buckley，J.5; De Salvo，B.5; Li，X.6; Kwong，D. L.6
通讯作者	Fang，Z.
发表日期	2012
DOI	10.1109/TED.2011.2178245
发表期刊	IEEE TRANSACTIONS ON ELECTRON DEVICES 影响因子和分区
ISSN	0018-9383
卷号	59 期号:3页码:850-853
摘要	In this brief, low-frequency noise (LFN) characteristics are studied in oxide-based (TiN/HfO /Pt) resistive random access nemory cells having different dimensions. It is confirmed that, for the low resistance state (LRS), current conduction is localized without an area dependence, whereas for the high resistance state, it is a uniform leakage current throughout the whole device area. An LFN model is proposed for the filamentary LRS based on the carrier number fluctuation approach, allowing physical analysis of filament characteristics and the surrounding trap concentration. © 2011 IEEE.
关键词	Current conduction filament noise model low-frequency noise (LFN) resistive random access memory (RRAM)
相关链接	[Scopus记录]
收录类别	SCI ; EI
语种	英语
学校署名	其他
WOS记录号	WOS:000300580600046
出版者	Institute of Electrical and Electronics Engineers Inc.
EI入藏号	20121014830483
EI主题词	Carrier concentration ; Spurious signal noise ; Tin oxides ; Titanium nitride
EI分类号	Electricity: Basic Concepts and Phenomena:701.1 ; Data Storage, Equipment and Techniques:722.1 ; Inorganic Compounds:804.2
ESI学科分类	ENGINEERING
Scopus记录号	2-s2.0-84862802785
来源库	Scopus
引用统计	被引频次[WOS]：29
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/70883
专题	南方科技大学
作者单位	1.Institute of Microelectronics,Agency for Science, Technology and Research (A STAR),Singapore 117685,Singapore 2.School of Electrical and Electronic Engineering,Nanyang Technological University,Singapore 639798,Singapore 3.South University of Science and Technology of China,Shenzhen 518055,China 4.IMEP-CNRS,MINATEC,38016 Grenoble,France 5.CEA-LETI,MINATEC,38054 Grenoble,France 6.Institute of Microelectronics,A STAR,Singapore 117685,Singapore
推荐引用方式 GB/T 7714	Fang，Z.,Yu，H. Y.,Chroboczek，J. A.,et al. Low-frequency noise in oxide-based (TiN/HfO x/Pt) resistive random access memory cells[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2012,59(3):850-853.
APA	Fang，Z..,Yu，H. Y..,Chroboczek，J. A..,Ghibaudo，G..,Buckley，J..,...&Kwong，D. L..(2012).Low-frequency noise in oxide-based (TiN/HfO x/Pt) resistive random access memory cells.IEEE TRANSACTIONS ON ELECTRON DEVICES,59(3),850-853.
MLA	Fang，Z.,et al."Low-frequency noise in oxide-based (TiN/HfO x/Pt) resistive random access memory cells".IEEE TRANSACTIONS ON ELECTRON DEVICES 59.3(2012):850-853.