Quantification of the sheet resistance between two-dimensional semiconductors and semi-metals by a contact-end-resistance method

Zhu，Wen1; Li，Yida2; Feng，Xuewei1

2024-02-12

10.1063/5.0189250

Applied Physics Letters   影响因子和分区

0003-6951

Semi-metal presents an extremely promising method for establishing an ohmic contact with near-quantum-limit contact resistance (R) in two-dimensional material (2DM) transistors. However, the physical mechanisms occurring at the interface between 2DMs and semi-metals, which contribute to R reduction, are not yet well understood. Leveraging on the contact-end-resistance model applied to the transfer length method structure, we conduct a quantitative and comprehensive characterization of the molybdenum disulfide (MoS) contact interface with various contact metals. The sheet resistance beneath the semi-metal contact (R) is found to be two orders of magnitude smaller than the sheet resistance of the channel (R), validating the electron doping effect of semi-metals on MoS contact areas. Among semi-metals studied, including bismuth (Bi), antimony (Sb), and their alloy, Bi results in the highest electron doping density and the lowest R of 764 Ω/◻, leading to an improvement in R down to 526 Ω μm. This work provides a perspective toward the physical mechanisms beneath the semi-metal induced R reduction, setting a strong foundation for devising strategies to lower the R in 2D-based devices.

SCI ; EI

英语

其他

PHYSICS

2-s2.0-85185007175

Scopus

1.School of Mechanical Engineering,Shanghai Jiao Tong University,Shanghai,200240,China
2.School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China

Zhu，Wen,Li，Yida,Feng，Xuewei. Quantification of the sheet resistance between two-dimensional semiconductors and semi-metals by a contact-end-resistance method[J]. Applied Physics Letters,2024,124(7).

Zhu，Wen,Li，Yida,&Feng，Xuewei.(2024).Quantification of the sheet resistance between two-dimensional semiconductors and semi-metals by a contact-end-resistance method.Applied Physics Letters,124(7).

Zhu，Wen,et al."Quantification of the sheet resistance between two-dimensional semiconductors and semi-metals by a contact-end-resistance method".Applied Physics Letters 124.7(2024).