Bipolar p-FET with Enhanced Conduction Capability on E-mode GaN-on-Si HEMT Platform

Jinjin Tang1; Zuoheng Jiang1; Chengcai Wang1; Junting Chen1; Haohao Chen1; Yihan Zhang2; Zheyang Zheng2; Xinyu Wang1; Jun Ma1; Junlei Zhao1; Jianxun Liu3; Qian Sun3; Mengyuan Hua1

10.1109/IEDM45741.2023.10413728

2023

0163-1918

979-8-3503-2768-7

2023 International Electron Devices Meeting (IEDM)

1-4

9-13 Dec. 2023

San Francisco, CA, USA

a bipolar p-FET (BiPFET) structure is proposed to enhance the conduction capability of GaN-based p-channel transistors that is limited by the intrinsically low hole mobility. In the BiPFET, a n-/p-/n-GaN (NPN) bipolar stack is depolyed at the drain side of a conventional p-FET, amplifying the conduction current with electrons serving as the majority carriers, which possess much higher mobility than holes. By matching the NPN stack with p-FET, the drain current density increases by 17 times compared to the conventional p-FET, exceeding 100 mA/mm. Meanwhile, the device control logic, high ION/IOFF ratio and low gate leakage current of the p-FET are also well preserved.

Three-dimensional displays Surface resistance HEMTs Logic gates Transistors Current density Surface treatment

第一

IEEE

1.Southern University of Science and Technology, Shenzhen, China
2.Hong Kong University of Science and Technology, Hong Kong, China
3.Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou, China

Jinjin Tang,Zuoheng Jiang,Chengcai Wang,et al. Bipolar p-FET with Enhanced Conduction Capability on E-mode GaN-on-Si HEMT Platform[C],2023:1-4.