HyFET—A GaN/SiC Hybrid Field-Effect Transistor

Sirui Feng1; Zheyang Zheng1; Yuru Wang1; Gang Lyu1; Kai Liu2; Yan Cheng1; Junting Chen1; Tao Chen1; Li Zhang1; Wenjie Song1; Hang Liao1; Yat Hon Ng1; Mengyuan Hua3; Kai Cheng2; Jin Wei4; Kevin J. Chen1

10.1109/IEDM45741.2023.10413796

2023

0163-1918

979-8-3503-2768-7

2023 International Electron Devices Meeting (IEDM)

1-4

9-13 Dec. 2023

San Francisco, CA, USA

We experimentally demonstrate a GaN/SiC hybrid field-effect transistor (HyFET)—a novel power electron device that can harness the complementary merits of GaN and SiC and circumvent their notorious drawbacks. The HyFET regulates currents by gating an AlGaN/GaN high-mobility 2- dimensional-electron-gas (2DEG) channel and blocks voltages with a vertical SiC junction-field-effect-transistor (JFET) structure. The channel mobility can be boosted by ~100 times compared to a SiC MOS-channel. The HyFET can be vertically configured to provide voltage blocking with avalanche capability and be free of the dynamic ON-resistance issue, which are difficult for GaN HEMTs. Critical technology enablers for implementing the GaN/SiC HyFET include a dual-epitaxy SiC JFET structure, GaN epitaxy on patterned 4°- off-axis 4H-SiC substrate, and a Damascene-process-based in- cell interconnection solution. Our experimental demonstration unveils a new power device platform that gears toward the utmost integration of these two prevailing wide-bandgap semiconductors.

Performance evaluation Silicon carbide HEMTs JFETs Transistors MODFETs Electron devices

其他

IEEE

1.The Hong Kong University of Science and Technology, Hong Kong, China
2.Enkris Semiconductor. Inc, China
3.Southern University of Science and Technology, China
4.Peking University, China

Sirui Feng,Zheyang Zheng,Yuru Wang,等. HyFET—A GaN/SiC Hybrid Field-Effect Transistor[C],2023:1-4.