Improved Performance of GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Towards Power Applications

GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are potential candidates for the next generation of high-power electronics. To further reduce dielectric defects and suppress the gate leakage, an in-situ SiN_x cap layer on the AlGaN barrier, which is grown continuously by metal-organic chemical vapor deposition (MOCVD), has been extensively studied as a means of protecting the AlGaN surface from air and process-induced damage. The passivation results in the presence of a large amount of positive fixed charges at the in-situ SiN_x/AlGaN interface, inducing a higher two-dimensional electron gas (2DEG) density at the AlGaN/GaN heterojunction. This enhances the drain current but at the expense of a lower threshold voltage (V_th). To achieve energy savings and improve safety, it is necessary to employ normally-off GaN HEMTs to simplify circuit designs and for fail-safe systems. This thesis introduces the fundamentals of GaN MIS-HEMTs and covers an overview of achieving normally-off operation and low-damage fabrication processes. Moreover, several continuously improved works have been conducted to address the abovementioned issues.

The first work uses an in-situ SiN_x passivation to compensate for the 2DEG deficiency in the access region of ultrathin-barrier (UTB) AlGaN/GaN heterojunction. A high D_2DEG of 1.50 × 10¹³ cm^-2 and a maximum I_D of 705 mA/mm was achieved. The variation of interface charges decreased the D_2DEG by five times compared with the piezoelectric polarization during SiN_x removal. In the case of MIS-HEMTs with oxide dielectrics, the in-situ SiN_x interlayer has demonstrated its great potential in reducing the oxide traps to achieve power HEMT devices with low interface states. Furthermore, The UTB Al_0.05Ga_0.95N/GaN MIS-HEMTs with various Al₂O₃/in-situ SiN_x gate dielectric stacks were fabricated. The ultralow subthreshold swing (SS) and double-sweep (testing the transfer curves up and down) V_th shift (∆V_th) was achieved by the excellent interface quality of in-situ SiN_x/AlGaN.

To solve the problem of the negative V_th shift induced by the positive fixed charges , the second work of pre-gate O₃ treatment to realize normally-off operation on an in-situ SiN_x/AlGaN/GaN platform was developed. The V_th was increased by 2 V by compensating the Al₂O₃/AlGaN net polarization charges with O₃ treatment in the atomic layer deposition (ALD) system. This also reduced the interface traps by more than one order of magnitude. The combination of in-situ SiN_x passivation and high-quality O₃-treated Al₂O₃/AlGaN gate interface led the device to display an excellent breakdown voltage of 1498 V at a low specific on-resistance of 2.02 mΩ·cm². Furthermore, based on the dielectric thickness-dependent experimental calculation and numerical simulation, a physical model for the positive fixed charges at the Al₂O₃/AlGaN interface was established. The gate stability, time-dependent, and temperature-dependent reliability were all improved. This ALD-O₃ treatment provides a practical method for fabricating normally-off GaN power MIS-HEMTs by fixed charge modulation.

In order to improve the positive V_th of the UTB GaN MIS-HEMTs, the third work involving two regrowth processes for the recessed-gate structure with in-situ SiN_x function layer was developed. The 20 nm Al_0.2Ga_0.8N and 10 nm in-situ SiN_x were regrown to restore 2DEG and reduce contact resistance (R_c). The partially-recessed MIS-HEMTs achieved a high V_th of more than 2.5 V with a low on-state resistance (R_on) of 5.5 Ω·mm by the gate dielectric of ALD-Al₂O₃ and 6.0 Ω·mm by ALD-HfO₂. A V_th of 0.6 V with ΔV_th below 30 mV was realized by the fully-recessed MIS-HEMTs with in-situ SiN_x/Al₂O₃ gate stacks. The devices on the wafer also delivered interface density lower than 10¹² cm⁻²eV⁻¹, high field-effect mobility of 1991 cm²/V·s, and narrow V_th distribution deviations below 0.23 V. Taking advantage of in-situ SiN_x with regrowth techniques shows great potential in achieving high-performance GaN normally-off MIS-HEMTs.

The fourth work is the development of a high-quality etching-free regrown fishbone trenches (RFT) to improve the recessed-gate GaN MIS-HEMT performance. The innovative RFT structure and improved etching-free process, achieved a series of normally-off GaN MIS-HEMTs with high V_th and excellent dynamic properties. In addition, the RFT structure enhanced the gate breakdown voltage and time-dependent reliability without sacrificing output performance.

In summary, this Ph.D. study encompasses the following aspects in a systematic self-sustainability manner. First, distinguishing influences on thin-barrier AlGaN/GaN heterojunction’s electrical properties with in-situ SiN_x caps. Second, exploring the practical O₃ treatment to solve the difficulty of normally-off operation on in-situ SiN_x/AlGaN/GaN platform. Third, further attempt the novel regrowth processes and trench pattern design to improve the device performance of normally-off GaN MIS-HEMTs. These works will provide new insight into the development of high-power GaN MIS-HEMTs.

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