Electrolyte Effect on Photoetching of Gallium Nitride

Liang，Huiqiang1,2; Wei，Zhenghao1,2; Fang，Jiongchong1,2; Li，Yanming3; Li，Changli3; Xie，Zhirun4; Ng，Yun Hau4,5; Zeng，Guosong1,2,6

2024-12-01

10.1007/s41871-024-00224-x

Nanomanufacturing and Metrology   影响因子和分区

2520-811X

The limited material removal rate of conventional chemical mechanical polishing (CMP) significantly hinders the fabrication efficiency and surface quality, thereby preventing the development of gallium nitride (GaN)-based devices. Moreover, the incorporation of photoelectrochemistry in CMP has garnered increasing attention because of its potential to enhance the quality and efficiency of the GaN process. However, a considerable gap still exists in the comprehensive understanding of the specific photoelectrochemical (PEC) behavior of GaN. Here, we report the influence of the electrolyte on the PEC etching of GaN. Various acids and bases were tested, with their pH being carefully adjusted. The concentrations of the cations and anions were also examined. The results showed that photocorrosion/photoetching was more pronounced in sulfuric acid, phosphoric acid, and nitric acid environments than in alkaline environments, but it was less pronounced in hydrochloric acid. Furthermore, the effects of pH and anion concentration on photoetching were investigated, and the results revealed that photoetching in acidic environments weakened with increasing pH levels and diminished with increasing sulfate concentration. The underlying reasons contributing to this observation were explored. These findings provide ideas for improving the photoetching efficiency of GaN, thereby enriching the photoelectrochemical mechanical polishing (PECMP) technology of GaN.

GaN pH Photoelectrochemistry Photoetching

英语

第一 ; 通讯

2-s2.0-85186947648

Scopus

1.Shenzhen Key Laboratory of Intelligent Robotics and Flexible Manufacturing Systems,Southern University of Science and Technology,Shenzhen,518055,China
2.Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,518055,China
3.School of Materials,Sun Yat-Sen University,Guangzhou,510275,China
4.School of Energy and Environment,City University of Hong Kong,Kowloon,999077,Hong Kong
5.City University of Hong Kong Shenzhen Research Institute,Shenzhen,Shenzhen Hi-Tech Industrial Park, Nanshan District,518000,China
6.SUSTech Energy Institute for Carbon Neutrality,Southern University of Science and Technology,Shenzhen,518055,China

Liang，Huiqiang,Wei，Zhenghao,Fang，Jiongchong,et al. Electrolyte Effect on Photoetching of Gallium Nitride[J]. Nanomanufacturing and Metrology,2024,7(1).

Liang，Huiqiang.,Wei，Zhenghao.,Fang，Jiongchong.,Li，Yanming.,Li，Changli.,...&Zeng，Guosong.(2024).Electrolyte Effect on Photoetching of Gallium Nitride.Nanomanufacturing and Metrology,7(1).

Liang，Huiqiang,et al."Electrolyte Effect on Photoetching of Gallium Nitride".Nanomanufacturing and Metrology 7.1(2024).