Confined van der Waals epitaxial growth of two-dimensional large single-crystal In2Se3 for flexible broadband photodetectors

Tang，Lei1; Teng，Changjiu1; Luo，Yuting1; Khan，Usman1; Pan，Haiyang2; Cai，Zhengyang1; Zhao，Yue2,3; Liu，Bilu1; Cheng，Hui Ming1,4

2019

10.34133/2019/2763704

Research   影响因子和分区

2639-5274

2639-5274

The controllable growth of two-dimensional (2D) semiconductors with large domain sizes and high quality ismuch needed in order to reduce the detrimental effect of grain boundaries on device performance but has proven to be challenging. Here, we analyze the precursor concentration on the substrate surface which significantly influences nucleation density in a vapor deposition growth process and design a confined micro-reactor to grow 2D InSe with large domain sizes and high quality.The uniqueness of this confined micro-reactor is that its size is ∼10-10 times smaller than that of a conventional reactor. Such a remarkably small reactor causes a very low precursor concentration on the substrate surface, which reduces nucleation density and leads to the growth of 2D InSe grains with sizes larger than 200 μm. Our experimental results show large domain sizes of the 2D InSe with high crystallinity.The flexible broadband photodetectors based on the as-grown InSe show rise and decay times of 140 ms and 25 ms, efficient response (5.6 A/W), excellent detectivity (7×1010 Jones), high external quantum efficiency (251%), good flexibility, and high stability. This study, in principle, provides an effective strategy for the controllable growth of high quality 2D materials with few grain boundaries.

ESCI ; EI

英语

其他

National Natural Science Foundation of China[51521091][51722206] ; National Key RD Program[2018YFA0307200] ; Shenzhen Basic Research Project[JCYJ20170307140956657][JCYJ20160613160524999][JCYJ20170412152620376][ZDSYS20170303165926217] ; Trade and Information Commission of Shenzhen Municipality[201901171523] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341]

Science & Technology - Other Topics

Multidisciplinary Sciences

WOS:000524980100029

AMER ASSOC ADVANCEMENT SCIENCE

20203509106759

Crystallinity ; Grain boundaries ; Nucleation ; Substrates ; Van der Waals forces ; Indium compounds ; Photodetectors ; Photons ; Single crystals

Physical Chemistry:801.4 ; Atomic and Molecular Physics:931.3 ; Crystalline Solids:933.1 ; Crystal Growth:933.1.2

2-s2.0-85078605252

Scopus

1.Shenzhen Geim Graphene Center,Tsinghua-Berkeley Shenzhen Institute,Tsinghua University,Shenzhen,518055,China
2.Shenzhen Institute for Quantum Science and Engineering,Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
3.Shenzhen Key Laboratory of Quantum Science and Engineering,Shenzhen,518055,China
4.Shenyang National Laboratory for Materials Sciences,Institute of Metal Research,Chinese Academy of Sciences,Shenyang,110016,China

Tang，Lei,Teng，Changjiu,Luo，Yuting,et al. Confined van der Waals epitaxial growth of two-dimensional large single-crystal In2Se3 for flexible broadband photodetectors[J]. Research,2019,2019.

Tang，Lei.,Teng，Changjiu.,Luo，Yuting.,Khan，Usman.,Pan，Haiyang.,...&Cheng，Hui Ming.(2019).Confined van der Waals epitaxial growth of two-dimensional large single-crystal In2Se3 for flexible broadband photodetectors.Research,2019.

Tang，Lei,et al."Confined van der Waals epitaxial growth of two-dimensional large single-crystal In2Se3 for flexible broadband photodetectors".Research 2019(2019).