Recent progress on the electronic structure, defect, and doping properties of Ga2O3

Zhang，Jiaye1,2; Shi，Jueli1; Qi，Dong Chen3; Chen，Lang2; Zhang，Kelvin H.L.1

2020-02-01

10.1063/1.5142999

APL Materials   影响因子和分区

2166532X

2166-532X

Gallium oxide (GaO) is an emerging wide bandgap semiconductor that has attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high breakdown field of 8 MV/cm, and high thermal stability. These properties enable GaO a promising material for a large range of applications, such as high power electronic devices and solar-blind ultraviolet (UV) photodetectors. In the past few years, a significant process has been made for the growth of high-quality bulk crystals and thin films and device optimizations for power electronics and solar blind UV detection. However, many challenges remain, including the difficulty in p-type doping, a large density of unintentional electron carriers and defects/impurities, and issues with the device process (contact, dielectrics, and surface passivation), and so on. The purpose of this article is to provide a timely review on the fundamental understanding of the semiconductor physics and chemistry of GaO in terms of electronic band structures, optical properties, and chemistry of defects and impurity doping. Recent progress and perspectives on epitaxial thin film growth, chemical and physical properties of defects and impurities, p-type doping, and ternary alloys with InO and AlO will be discussed.

SCI ; EI

英语

ESI高被引

其他

Science and Technology Research Items of Shenzhen[JCYJ20170412153325679] ; Science and Technology Research Items of Shenzhen[JCYJ20180504165650580]

Science & Technology - Other Topics ; Materials Science ; Physics

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000517462500001

American Institute of Physics Inc.

20200908231944

Alumina ; Aluminum alloys ; Aluminum oxide ; Crystal impurities ; Electronic structure ; Energy gap ; Film growth ; Indium alloys ; Indium compounds ; Optical properties ; Passivation ; Power electronics ; Semiconductor doping ; Ternary alloys ; Thin films ; Wide band gap semiconductors

Protection Methods:539.2.1 ; Aluminum Alloys:541.2 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1 ; Compound Semiconducting Materials:712.1.2 ; Light/Optics:741.1 ; Inorganic Compounds:804.2 ; Crystal Lattice:933.1.1

2-s2.0-85081084298

Scopus

1.State Key Laboratory of Physical Chemistry of Solid Surfaces,College of Chemistry and Chemical Engineering,Xiamen University,Xiamen,361005,China
2.Department of Physics,Southern University of Science and Technology,Shenzhen, Guangdong,No. 1088, Xueyuan Blvd.,518055,China
3.Centre for Materials Science,School of Chemistry and Physics,Queensland University of Technology,Brisbane,4001,Australia

Zhang，Jiaye,Shi，Jueli,Qi，Dong Chen,et al. Recent progress on the electronic structure, defect, and doping properties of Ga2O3[J]. APL Materials,2020,8(2).

Zhang，Jiaye,Shi，Jueli,Qi，Dong Chen,Chen，Lang,&Zhang，Kelvin H.L..(2020).Recent progress on the electronic structure, defect, and doping properties of Ga2O3.APL Materials,8(2).

Zhang，Jiaye,et al."Recent progress on the electronic structure, defect, and doping properties of Ga2O3".APL Materials 8.2(2020).