Evolution of GeSi islands in epitaxial Ge-on-Si during annealing

Zhu，Ying1,2; Zhang，Yiwen1; Li，Bowen1; Xia，Guangrui (Maggie)2; Wen，Rui Tao1

2024-06-30

10.1016/j.apsusc.2024.159901

Applied Surface Science   影响因子和分区

0169-4332

Epitaxial growth of Ge on Si has been widely studied for photonic and electronic applications. However, GeSi interdiffusion during the growth or annealing deteriorates the performance of the devices. This paper explores the evolution of the interface and GeSi interdiffusion upon post-annealing. We found the GeSi interdiffusion islands with concentration plateaus gradually disappeared upon annealing and the interdiffusion became more pronounced in the Ge layer. Moreover, by using a thin layer of SiO as a reference, we directly visualized the Kirkendall phenomenon, i.e., the migration of the Ge/Si interface towards the Si substrate after the annealing. Effective interdiffusivity at 900 °C was extracted using Boltzmann-Matano analysis, which indicated that the GeSi interdiffusion at the interface was dominated by dislocation-mediated interdiffusion.

Ge/Si interface Interdiffusion Kirkendall effect

SCI ; EI

英语

第一

20241215787655

Annealing ; Epitaxial growth ; Germanium ; Silica ; Silicon

Heat Treatment Processes:537.1 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1 ; Chemical Operations:802.3 ; Crystal Growth:933.1.2

MATERIALS SCIENCE

2-s2.0-85188097418

Scopus

1.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
2.Department of Materials Engineering,The University of British Columbia (UBC),Vancouver,V6T 1Z4,Canada

Zhu，Ying,Zhang，Yiwen,Li，Bowen,et al. Evolution of GeSi islands in epitaxial Ge-on-Si during annealing[J]. Applied Surface Science,2024,659.

Zhu，Ying,Zhang，Yiwen,Li，Bowen,Xia，Guangrui ,&Wen，Rui Tao.(2024).Evolution of GeSi islands in epitaxial Ge-on-Si during annealing.Applied Surface Science,659.

Zhu，Ying,et al."Evolution of GeSi islands in epitaxial Ge-on-Si during annealing".Applied Surface Science 659(2024).