Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures

Gustafsson，Anders1; Persson，Axel R.2,3; Persson，Per O.Å.2; Darakchieva，Vanya1,3; Bi，Zhaoxia1,4; Samuelson，Lars1,5

2024-06-17

10.1088/1361-6528/ad33e9

Nanotechnology   影响因子和分区

0957-4484

1361-6528

We have investigated the optical properties of heterostructured InGaN platelets aiming at red emission, intended for use as nano-scaled light-emitting diodes. The focus is on the presence of non-radiative emission in the form of dark line defects. We have performed the study using hyperspectral cathodoluminescence imaging. The platelets were grown on a template consisting of InGaN pyramids, flattened by chemical mechanical polishing. These templates are defect free, whereas the dark line defects are introduced in the lower barrier and tend to propagate through all the subsequent layers, as revealed by the imaging of different layers in the structure. We conclude that the dark line defects are caused by stacking mismatch boundaries introduced by multiple seeding and step bunching at the edges of the as-polished, dome shaped templates. To avoid these defects, we suggest that the starting material must be flat rather than dome shaped.

cathodoluminescence III-nitrides platelets stacking mismatch boundaries μ-LED

SCI ; EI

英语

其他

MATERIALS SCIENCE

2-s2.0-85189854230

Scopus

1.Solid State Physics and NanoLund,Lund University,Lund,Box 118,SE-221 00,Sweden
2.Thin Film Physics Division,Department of Physics,Chemistry and Biology (IFM),Linköping University,Linköping,SE-581 83,Sweden
3.Competence Center for III-Nitride Technology C3NiT-Janzén,Department of Physics,Chemistry and Biology (IFM),Linköping University,Linköping,SE-581 83,Sweden
4.Future Display Institute of Xiamen,Xiamen,361005,China
5.Institute of Nanoscience and Applications,Southern University of Science and Technology,Shenzhen,China

Gustafsson，Anders,Persson，Axel R.,Persson，Per O.Å.,et al. Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures[J]. Nanotechnology,2024,35(25).

Gustafsson，Anders,Persson，Axel R.,Persson，Per O.Å.,Darakchieva，Vanya,Bi，Zhaoxia,&Samuelson，Lars.(2024).Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures.Nanotechnology,35(25).

Gustafsson，Anders,et al."Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures".Nanotechnology 35.25(2024).