Polarization fatigue mechanism of laminated hafnium zirconium oxide ferroelectric thin films

Zeng，Binjian1; Xie，Shichang1; Zhang，Sirui2; Huang，Haoliang3; Ju，Changfan1; Zheng，Shuaizhi1; Peng，Qiangxiang1; Yang，Qiong1; Zhou，Yichun2; Liao，Min1

2024-06-15

10.1016/j.actamat.2024.119920

Acta Materialia   影响因子和分区

1359-6454

Laminated HfO-based ferroelectric thin films (FE-HfO) have offered unexpected opportunities to implement the high-density ferroelectric memory and on chip piezoelectric or pyroelectric devices. But the polarization fatigue performance is poor and the underlying mechanism is unknown. In this work, we comprehensively investigate the polarization fatigue behaviors of HfZrO(HZO)/AlO/HZO laminated thin films. Several possible mechanisms for the fatigue performances are discussed in detail. On basis of the analysis of micro-structures and domain switching dynamics before and after fatigue, we confirm that domain wall pinning phenomenon exists in the fatigued laminated HZO, without field-induced phase transition as well as thickness and chemical properties changes of interfacial layers. Moreover, we discover by a pulse measurement method that domain wall pinning induced by the increase of AlO/HZO interface trap charge is responsible for the fatigue performances of the laminated films. This work will provide useful guidance for designing high-reliability laminated FE-HfO, and contribute to understand the physical mechanisms of FE-HfO.

Domain wall pinning Ferroelectric memories Interface trap charge Laminated Hf0.5Zr0.5O2 ferroelectric thin film Polarization fatigue

SCI ; EI

英语

其他

MATERIALS SCIENCE

2-s2.0-85190435960

Scopus

1.Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education,School of Materials Science and Engineering,Xiangtan University,Xiangtan,411105,China
2.School of Advanced Materials and Nanotechnology,Xidian University,Xi'an,710071,China
3.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China

Zeng，Binjian,Xie，Shichang,Zhang，Sirui,et al. Polarization fatigue mechanism of laminated hafnium zirconium oxide ferroelectric thin films[J]. Acta Materialia,2024,272.

Zeng，Binjian.,Xie，Shichang.,Zhang，Sirui.,Huang，Haoliang.,Ju，Changfan.,...&Liao，Min.(2024).Polarization fatigue mechanism of laminated hafnium zirconium oxide ferroelectric thin films.Acta Materialia,272.

Zeng，Binjian,et al."Polarization fatigue mechanism of laminated hafnium zirconium oxide ferroelectric thin films".Acta Materialia 272(2024).