中文版 | English
题名

Near-infrared lead chalcogenide quantum dots: Synthesis and applications in light emitting diodes

作者
通讯作者Wang,Kai
发表日期
2019
DOI
发表期刊
ISSN
1674-1056
EISSN
2058-3834
卷号28期号:12页码:前插1,1-13
摘要

This paper reviews the recent progress in the synthesis of near-infrared (NIR) lead chalcogenide (PbX; PbX = PbS, PbSe, PbTe) quantum dots (QDs) and their applications in NIR QDs based light emitting diodes (NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance PbX based NIR-QLEDs.

关键词
相关链接[Scopus记录]
收录类别
SCI ; EI
语种
英语
学校署名
第一 ; 通讯
资助项目
the National Key Research and Development Program,China(Grant .2016YFB0401702 and 2017YFE0120400)%the National Natural Science Foundation of China(Grant .61875082 and 61405089)%the Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting,China(Grant 2017KSYS007)%the Natural Science Foundation of Guangdong,China(Grant 2017B030306010)%the Guangdong Province's 2018-2019 Key R&D Program:Environmentally Friendly Quantum Dots Luminescent Materials,China(Grant 2019B010924001)%the Shenzhen Innovation Project,China(Grant .JCYJ20160301113356947 and JSGG20170823160757004)%the Shenzhen Peacock Team Project,China(Grant KQTD2016030111203005)%the Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting,China(Grant ZDSYS201707281632549)%the Tianjin New Materials Science and Technology Key Project,China (Grant No.16ZXCLGX00040).The authors acknowledge the assistance of SUSTech Core Research Facilities.The authors would like to thank the Pico Center at SUSTech that receives support from Presidential fund and Development and Reform Co
WOS研究方向
Physics
WOS类目
Physics, Multidisciplinary
WOS记录号
WOS:000516547400002
出版者
EI入藏号
20200808186118
EI主题词
Carbon Quantum Dots ; Chalcogenides ; Diodes ; Graphene Quantum Dots ; Infrared Devices ; Iv-vi Semiconductors ; Lead Compounds ; Light Emitting Diodes ; Nanocrystals ; Organic Light Emitting Diodes (Oled) ; Selenium Compounds ; Tellurium Compounds
EI分类号
Semiconductor Devices And Integrated Circuits:714.2 ; Nanotechnology:761 ; Inorganic Compounds:804.2
Scopus记录号
2-s2.0-85079418343
来源库
Scopus
万方记录号
zgwl-e201912001
引用统计
被引频次[WOS]:16
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/74797
专题工学院_电子与电气工程系
前沿与交叉科学研究院
作者单位
1.Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting,Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting,Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
2.Academy for Advanced Interdisciplinary Studies,Southern University of Science and Technology,Shenzhen,518055,China
第一作者单位电子与电气工程系
通讯作者单位电子与电气工程系
第一作者的第一单位电子与电气工程系
推荐引用方式
GB/T 7714
Liu,Haochen,Zhong,Huaying,Zheng,Fankai,et al. Near-infrared lead chalcogenide quantum dots: Synthesis and applications in light emitting diodes[J]. Chinese Physics B,2019,28(12):前插1,1-13.
APA
Liu,Haochen.,Zhong,Huaying.,Zheng,Fankai.,Xie,Yue.,Li,Depeng.,...&Wang,Kai.(2019).Near-infrared lead chalcogenide quantum dots: Synthesis and applications in light emitting diodes.Chinese Physics B,28(12),前插1,1-13.
MLA
Liu,Haochen,et al."Near-infrared lead chalcogenide quantum dots: Synthesis and applications in light emitting diodes".Chinese Physics B 28.12(2019):前插1,1-13.
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