题名 | Near-infrared lead chalcogenide quantum dots: Synthesis and applications in light emitting diodes |
作者 | |
通讯作者 | Wang,Kai |
发表日期 | 2019
|
DOI | |
发表期刊 | |
ISSN | 1674-1056
|
EISSN | 2058-3834
|
卷号 | 28期号:12页码:前插1,1-13 |
摘要 | This paper reviews the recent progress in the synthesis of near-infrared (NIR) lead chalcogenide (PbX; PbX = PbS, PbSe, PbTe) quantum dots (QDs) and their applications in NIR QDs based light emitting diodes (NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance PbX based NIR-QLEDs. |
关键词 | |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
资助项目 | the National Key Research and Development Program,China(Grant .2016YFB0401702 and 2017YFE0120400)%the National Natural Science Foundation of China(Grant .61875082 and 61405089)%the Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting,China(Grant 2017KSYS007)%the Natural Science Foundation of Guangdong,China(Grant 2017B030306010)%the Guangdong Province's 2018-2019 Key R&D Program:Environmentally Friendly Quantum Dots Luminescent Materials,China(Grant 2019B010924001)%the Shenzhen Innovation Project,China(Grant .JCYJ20160301113356947 and JSGG20170823160757004)%the Shenzhen Peacock Team Project,China(Grant KQTD2016030111203005)%the Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting,China(Grant ZDSYS201707281632549)%the Tianjin New Materials Science and Technology Key Project,China (Grant No.16ZXCLGX00040).The authors acknowledge the assistance of SUSTech Core Research Facilities.The authors would like to thank the Pico Center at SUSTech that receives support from Presidential fund and Development and Reform Co
|
WOS研究方向 | Physics
|
WOS类目 | Physics, Multidisciplinary
|
WOS记录号 | WOS:000516547400002
|
出版者 | |
EI入藏号 | 20200808186118
|
EI主题词 | Carbon Quantum Dots
; Chalcogenides
; Diodes
; Graphene Quantum Dots
; Infrared Devices
; Iv-vi Semiconductors
; Lead Compounds
; Light Emitting Diodes
; Nanocrystals
; Organic Light Emitting Diodes (Oled)
; Selenium Compounds
; Tellurium Compounds
|
EI分类号 | Semiconductor Devices And Integrated Circuits:714.2
; Nanotechnology:761
; Inorganic Compounds:804.2
|
Scopus记录号 | 2-s2.0-85079418343
|
来源库 | Scopus
|
万方记录号 | zgwl-e201912001
|
引用统计 |
被引频次[WOS]:16
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/74797 |
专题 | 工学院_电子与电气工程系 前沿与交叉科学研究院 |
作者单位 | 1.Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting,Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting,Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China 2.Academy for Advanced Interdisciplinary Studies,Southern University of Science and Technology,Shenzhen,518055,China |
第一作者单位 | 电子与电气工程系 |
通讯作者单位 | 电子与电气工程系 |
第一作者的第一单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Liu,Haochen,Zhong,Huaying,Zheng,Fankai,et al. Near-infrared lead chalcogenide quantum dots: Synthesis and applications in light emitting diodes[J]. Chinese Physics B,2019,28(12):前插1,1-13.
|
APA |
Liu,Haochen.,Zhong,Huaying.,Zheng,Fankai.,Xie,Yue.,Li,Depeng.,...&Wang,Kai.(2019).Near-infrared lead chalcogenide quantum dots: Synthesis and applications in light emitting diodes.Chinese Physics B,28(12),前插1,1-13.
|
MLA |
Liu,Haochen,et al."Near-infrared lead chalcogenide quantum dots: Synthesis and applications in light emitting diodes".Chinese Physics B 28.12(2019):前插1,1-13.
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
Liu_2019_Chinese_Phy(6447KB) | -- | -- | 限制开放 | -- |
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