| 题名 | Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm |
| 作者 | |
| 发表日期 | 2024-04
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| DOI | |
| 发表期刊 | |
| ISSN | 1558-0563
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| 卷号 | 45期号:4页码:641-644 |
| 关键词 | |
| 相关链接 | [IEEE记录] |
| 收录类别 | |
| 学校署名 | 其他
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| ESI学科分类 | ENGINEERING
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| 来源库 | IEEE
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| 全文链接 | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10459218 |
| 引用统计 |
被引频次[WOS]：1
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| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/760828 |
| 专题 | 工学院_电子与电气工程系 |
| 作者单位 | 1.Department of Electrical and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, SAR, China 2.Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Jiangsu Institute of Advanced Semiconductors, Suzhou, Jiangsu, China 3.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China |
| 推荐引用方式 GB/T 7714 |
Yibo Liu,Guobin Wang,Feng Feng,et al. Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm[J]. IEEE Electron Device Letters,2024,45(4):641-644.
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| APA |
Yibo Liu.,Guobin Wang.,Feng Feng.,Zichun Li.,Ke Xu.,...&Zhaojun Liu.(2024).Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm.IEEE Electron Device Letters,45(4),641-644.
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| MLA |
Yibo Liu,et al."Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm".IEEE Electron Device Letters 45.4(2024):641-644.
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| 条目包含的文件 | 条目无相关文件。 | |||||
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