南方科技大学知识苑(SUSTech KC): A Full-Oxide CMOS Operational Amplifier Based on n-Type IGZO and p-Type SnO Thin-Film Transistors

题名	A Full-Oxide CMOS Operational Amplifier Based on n-Type IGZO and p-Type SnO Thin-Film Transistors
作者	Mingyu Zhuang 1; Mingyang Wang 1; Zhiyuan Wang 1; Jiawei Zhang 1; Qian Xin 1; Aimin Song2
发表日期	2024
DOI	10.1109/TED.2024.3390096
发表期刊	IEEE Transactions on Electron Devices 影响因子和分区
ISSN	1557-9646
卷号	PP 期号:99页码:1-6
关键词	CMOS indium-gallium-zinc-oxide (IGZO) operational amplifier (op-amp) oxide semiconductor thin-film transistor (TFT) tin monoxide (SnO)
相关链接	[IEEE记录]
收录类别	SCI ; EI
学校署名	其他
ESI学科分类	ENGINEERING
来源库	IEEE
全文链接	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10508725
引用统计	被引频次[WOS]：1
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/760900
专题	南方科技大学
作者单位	1.School of Microelectronics, Shandong Technology Center of Nanodevices and Integration, Shandong University, Jinan, China 2.Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China
推荐引用方式 GB/T 7714	Mingyu Zhuang,Mingyang Wang,Zhiyuan Wang,et al. A Full-Oxide CMOS Operational Amplifier Based on n-Type IGZO and p-Type SnO Thin-Film Transistors[J]. IEEE Transactions on Electron Devices,2024,PP(99):1-6.
APA	Mingyu Zhuang,Mingyang Wang,Zhiyuan Wang,Jiawei Zhang,Qian Xin,&Aimin Song.(2024).A Full-Oxide CMOS Operational Amplifier Based on n-Type IGZO and p-Type SnO Thin-Film Transistors.IEEE Transactions on Electron Devices,PP(99),1-6.
MLA	Mingyu Zhuang,et al."A Full-Oxide CMOS Operational Amplifier Based on n-Type IGZO and p-Type SnO Thin-Film Transistors".IEEE Transactions on Electron Devices PP.99(2024):1-6.