Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi2Te4

Li，Yaoxin1; Wang，Yongchao1; Lian，Zichen1; Li，Hao2,3; Gao，Zhiting4; Xu，Liangcai1; Wang，Huan5,6; Lu，Rui’e7; Li，Longfei8; Feng，Yang4; Zhu，Jinjiang9; Liu，Liangyang1; Wang，Yongqian5,6; Fu，Bohan5,6; Yang，Shuai5,6; Yang，Luyi1,10; Wang，Yihua9,11; Xia，Tianlong5,6; Liu，Chang12; Jia，Shuang8,13,14; Wu，Yang15; Zhang，Jinsong1,10,16; Wang，Yayu1,10,16; Liu，Chang5,6

2024-12-01

10.1038/s41467-024-47779-3

Nature Communications   影响因子和分区

2041-1723

The van der Waals antiferromagnetic topological insulator MnBiTe represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBiTe in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBiTe. We perform a comprehensive study of the magnetotransport properties in 6- and 7-septuple-layer MnBiTe, and reveal that both even- and odd-number-layer device can show zero Hall plateau phenomena in zero magnetic field. Importantly, a statistical survey of the optical contrast in more than 200 MnBiTe flakes reveals that the zero Hall plateau in odd-number-layer devices arises from the reduction of the effective thickness during the fabrication, a factor that was rarely noticed in previous studies of 2D materials. Our finding not only provides an explanation to the controversies regarding the discrepancy of the even-odd layer dependent magnetotransport in MnBiTe, but also highlights the critical issues concerning the fabrication and characterization of 2D material devices.

SCI

英语

通讯

2-s2.0-85191050634

Scopus

1.Department of Physics,State Key Laboratory of Low Dimensional Quantum Physics,Tsinghua University,Beijing,100084,China
2.School of Materials Science and Engineering,Tsinghua University,Beijing,100084,China
3.Department of Physics,Tsinghua-Foxconn Nanotechnology Research Center,Tsinghua University,Beijing,100084,China
4.Beijing Academy of Quantum Information Sciences,Beijing,100193,China
5.Department of Physics,Beijing Key Laboratory of Opto-electronic Functional Materials & amp; Micro-Nano Devices,Renmin University of China,Beijing,100872,China
6.Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education),Renmin University of China,Beijing,100872,China
7.School of Mechanical and Electric Engineering,Guangzhou University,Guangzhou,510006,China
8.International Center for Quantum Materials,School of Physics,Peking University,Beijing,100871,China
9.State Key Laboratory of Surface Physics and Department of Physics,Fudan University,Shanghai,200433,China
10.Frontier Science Center for Quantum Information,Beijing,100084,China
11.Shanghai Research Center for Quantum Sciences,Shanghai,201315,China
12.Shenzhen Institute for Quantum Science and Engineering and Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
13.Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials,Peking University,Beijing,100871,China
14.CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing,100190,China
15.College of Math and Physics,Beijing University of Chemical Technology,Beijing,100029,China
16.Hefei National Laboratory,Hefei,230088,China

Li，Yaoxin,Wang，Yongchao,Lian，Zichen,et al. Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi2Te4[J]. Nature Communications,2024,15(1).

Li，Yaoxin.,Wang，Yongchao.,Lian，Zichen.,Li，Hao.,Gao，Zhiting.,...&Liu，Chang.(2024).Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi2Te4.Nature Communications,15(1).

Li，Yaoxin,et al."Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi2Te4".Nature Communications 15.1(2024).