中文版 | English
题名

Hexagonal Ta2O5 (10 1‾ 0) single-crystalline films grown on LaAlO3 (010) substrates by MOCVD

作者
通讯作者Ma,Xiaochen
发表日期
2024-08-15
DOI
发表期刊
ISSN
1369-8001
卷号179
摘要
Single-crystalline hexagonal tantalum pentoxide (δ-TaO) films were grown on LaAlO (010) substrates by MOCVD. A high substrate temperature of 840 °C was required to achieve the best crystalline quality and the root-mean-square surface roughness of the optimum film was 0.26 nm. The films grew along the δ-TaO [100] direction and the heteroepitaxial relationship between the film and the substrate was confirmed as δ-TaO (100) ‖ LaAlO (010) with δ-TaO [0001] ‖ LaAlO <001>. The film showed a stoichiometric ratio of TaO and a pentavalent state of Ta element. The optical band gap of the single-crystalline δ-TaO film was determined as 4.19 eV.
关键词
相关链接[Scopus记录]
收录类别
语种
英语
学校署名
其他
EI入藏号
20241916036167
EI主题词
Aluminum compounds ; Energy gap ; Epitaxial growth ; Lanthanum compounds ; Substrates ; Tantalum oxides
EI分类号
Chemical Operations:802.3 ; Chemical Products Generally:804 ; Physical Properties of Gases, Liquids and Solids:931.2 ; Crystal Growth:933.1.2
ESI学科分类
MATERIALS SCIENCE
Scopus记录号
2-s2.0-85192082087
来源库
Scopus
引用统计
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/760973
专题工学院_材料科学与工程系
作者单位
1.Key Laboratory of Optoelectronics Technology,College of Microelectronics,Beijing University of Technology,Beijing,100124,China
2.Department of Materials Science and Engineering,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
3.School of Microelectronics,Shandong University,Jinan,250101,China
推荐引用方式
GB/T 7714
Ma,Xiaochen,Li,Yuanheng,Le,Yong,等. Hexagonal Ta2O5 (10 1‾ 0) single-crystalline films grown on LaAlO3 (010) substrates by MOCVD[J]. Materials Science in Semiconductor Processing,2024,179.
APA
Ma,Xiaochen,Li,Yuanheng,Le,Yong,&Zhang,Biao.(2024).Hexagonal Ta2O5 (10 1‾ 0) single-crystalline films grown on LaAlO3 (010) substrates by MOCVD.Materials Science in Semiconductor Processing,179.
MLA
Ma,Xiaochen,et al."Hexagonal Ta2O5 (10 1‾ 0) single-crystalline films grown on LaAlO3 (010) substrates by MOCVD".Materials Science in Semiconductor Processing 179(2024).
条目包含的文件
条目无相关文件。
个性服务
原文链接
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
导出为Excel格式
导出为Csv格式
Altmetrics Score
谷歌学术
谷歌学术中相似的文章
[Ma,Xiaochen]的文章
[Li,Yuanheng]的文章
[Le,Yong]的文章
百度学术
百度学术中相似的文章
[Ma,Xiaochen]的文章
[Li,Yuanheng]的文章
[Le,Yong]的文章
必应学术
必应学术中相似的文章
[Ma,Xiaochen]的文章
[Li,Yuanheng]的文章
[Le,Yong]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
[发表评论/异议/意见]
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。