题名 | Hexagonal Ta2O5 (10 1‾ 0) single-crystalline films grown on LaAlO3 (010) substrates by MOCVD |
作者 | |
通讯作者 | Ma,Xiaochen |
发表日期 | 2024-08-15
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DOI | |
发表期刊 | |
ISSN | 1369-8001
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卷号 | 179 |
摘要 | Single-crystalline hexagonal tantalum pentoxide (δ-TaO) films were grown on LaAlO (010) substrates by MOCVD. A high substrate temperature of 840 °C was required to achieve the best crystalline quality and the root-mean-square surface roughness of the optimum film was 0.26 nm. The films grew along the δ-TaO [100] direction and the heteroepitaxial relationship between the film and the substrate was confirmed as δ-TaO (100) ‖ LaAlO (010) with δ-TaO [0001] ‖ LaAlO <001>. The film showed a stoichiometric ratio of TaO and a pentavalent state of Ta element. The optical band gap of the single-crystalline δ-TaO film was determined as 4.19 eV. |
关键词 | |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
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学校署名 | 其他
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EI入藏号 | 20241916036167
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EI主题词 | Aluminum compounds
; Energy gap
; Epitaxial growth
; Lanthanum compounds
; Substrates
; Tantalum oxides
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EI分类号 | Chemical Operations:802.3
; Chemical Products Generally:804
; Physical Properties of Gases, Liquids and Solids:931.2
; Crystal Growth:933.1.2
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ESI学科分类 | MATERIALS SCIENCE
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Scopus记录号 | 2-s2.0-85192082087
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来源库 | Scopus
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引用统计 | |
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/760973 |
专题 | 工学院_材料科学与工程系 |
作者单位 | 1.Key Laboratory of Optoelectronics Technology,College of Microelectronics,Beijing University of Technology,Beijing,100124,China 2.Department of Materials Science and Engineering,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China 3.School of Microelectronics,Shandong University,Jinan,250101,China |
推荐引用方式 GB/T 7714 |
Ma,Xiaochen,Li,Yuanheng,Le,Yong,等. Hexagonal Ta2O5 (10 1‾ 0) single-crystalline films grown on LaAlO3 (010) substrates by MOCVD[J]. Materials Science in Semiconductor Processing,2024,179.
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APA |
Ma,Xiaochen,Li,Yuanheng,Le,Yong,&Zhang,Biao.(2024).Hexagonal Ta2O5 (10 1‾ 0) single-crystalline films grown on LaAlO3 (010) substrates by MOCVD.Materials Science in Semiconductor Processing,179.
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MLA |
Ma,Xiaochen,et al."Hexagonal Ta2O5 (10 1‾ 0) single-crystalline films grown on LaAlO3 (010) substrates by MOCVD".Materials Science in Semiconductor Processing 179(2024).
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条目包含的文件 | 条目无相关文件。 |
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