Fabrication of penetrating pores in epitaxial Ge-on-Si through preferential etching along threading dislocations

Zhu，Ying1,2; Zhang，Yiwen1; Li，Bowen1; Xia，Guangrui (Maggie)2; Wen，Rui Tao1

2024-07-20

10.1016/j.electacta.2024.144416

Electrochimica Acta   影响因子和分区

0013-4686

Epitaxial Ge-on-Si possesses a high density of threading dislocations (TDs) due to the lattice mismatch and difference in thermal expansion coefficient. By employing the lattice distortion at the TDs, we demonstrate that penetrating pores along TDs can be formed in both p- and n-type heteroepitaxial Ge layers through a preferential etching. It has been found that the preferential etching at TD sites takes place in the porosification process of Ge-on-Si samples and is independent of the doping type and concentration. The penetrating pores follow the path of the TD lines and can penetrate the entire Ge layer of 1.3 μm to further porosificate the Si substrate. The effects of anodic current density and total etching duration have been thoroughly investigated on forming penetrating pores at TD sites. The dissolution mechanism in the porosification process has been revealed by dissolution valence calculation and recorded potential curves. Our findings shed light on Ge perforation in both p- and n-type Ge-on-Si and show great potential in Si-based integrated photonics and microelectronics.

Ge-on-Si Porous germanium Preferential etching Threading dislocations

SCI ; EI

英语

第一

20242016087721

Dissolution ; Etching ; Germanium ; Lattice mismatch ; Photonics ; Thermal expansion

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Thermodynamics:641.1 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3 ; Chemical Reactions:802.2 ; Chemical Operations:802.3 ; Crystal Lattice:933.1.1 ; Materials Science:951

CHEMISTRY

2-s2.0-85192837167

Scopus

1.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
2.Department of Materials Engineering,The University of British Columbia (UBC),Vancouver,V6T 1Z4,Canada

Zhu，Ying,Zhang，Yiwen,Li，Bowen,et al. Fabrication of penetrating pores in epitaxial Ge-on-Si through preferential etching along threading dislocations[J]. Electrochimica Acta,2024,493.

Zhu，Ying,Zhang，Yiwen,Li，Bowen,Xia，Guangrui ,&Wen，Rui Tao.(2024).Fabrication of penetrating pores in epitaxial Ge-on-Si through preferential etching along threading dislocations.Electrochimica Acta,493.

Zhu，Ying,et al."Fabrication of penetrating pores in epitaxial Ge-on-Si through preferential etching along threading dislocations".Electrochimica Acta 493(2024).