Recent advances of phase transition and ferroelectric device in two-dimensional In2Se3

Han，Wei1,2; Wang，Zhen3; Guan，Shuang2; Wei，Jiayun2; Jiang，Yunrui4; Zeng，Longhui5; Shen，Liangping1,2; Yang，Daohong1; Wang，Hao1,2

2024-06-01

10.1063/5.0190609

Applied Physics Reviews   影响因子和分区

1931-9401

The coupling of ferroelectric, photoelectric, semiconducting, and phase transition properties make two-dimensional (2D) InSe a material platform with great application potential in the phase change memory, intelligent sensing, and in-memory computing devices. However, at present, there are unclear phase transition mechanisms and ferroelectric dynamics in 2D InSe, which seriously hinder the development of device applications. In this review, we mainly highlight the phase transition mechanisms and ferroelectric devices of InSe beginning with the history of bulk InSe and of 2D InSe. The phase transition relations of the four InSe phases, including α-, β-, β′-, and γ-phases, under various driving forces, are summarized. The different driving forces, including temperature, laser, electric-field, vacancy, doping, and strain, are introduced and discussed. Moreover, the phase-control growth of 2D InSe films and their novel ferroelectric device applications are demonstrated. Finally, a perspective on future research directions of 2D InSe is provided.

SCI ; EI

英语

其他

2-s2.0-85192964179

Scopus

1.Hubei Yangtze Memory Laboratories,Wuhan,430205,China
2.Institute of Microelectronics and Integrated Circuits,School of Microelectronics,Hubei University,Wuhan,430062,China
3.School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China
4.Department of Electrical and Computer Engineering,University of California San Diego,San Diego,92093,United States
5.School of Physics and Microelectronics,Key Laboratory of Material Physics Ministry of Education,Zhengzhou University,Zhengzhou,Henan,450052,China

Han，Wei,Wang，Zhen,Guan，Shuang,et al. Recent advances of phase transition and ferroelectric device in two-dimensional In2Se3[J]. Applied Physics Reviews,2024,11(2).

Han，Wei.,Wang，Zhen.,Guan，Shuang.,Wei，Jiayun.,Jiang，Yunrui.,...&Wang，Hao.(2024).Recent advances of phase transition and ferroelectric device in two-dimensional In2Se3.Applied Physics Reviews,11(2).

Han，Wei,et al."Recent advances of phase transition and ferroelectric device in two-dimensional In2Se3".Applied Physics Reviews 11.2(2024).