Engineering the SiOx interfacial layer of Si-based metal-insulator-semiconductor junction for photoelectrochemical hydrogen production

Li，Yao1; Ding，Chenglong1; Li，Yanming1; Fang，Jiongchong2; Zeng，Guosong2; He，Jingfu1; Li，Changli1

2024-06-01

10.1016/j.jcat.2024.115533

Journal of Catalysis   影响因子和分区

0021-9517

1090-2694

Photoelectrochemical (PEC) water splitting provides a potential method to produce renewable hydrogen energy, but there is still plenty of room for improving the efficiency and stability of photoelectrodes. In this paper, we present a metal–insulator-semiconductor (MIS) structure based on p-Si that enables stable and efficient water splitting by engineering the interfacial insulating layer. The silicon oxide (SiO) film with appropriate thickness and low defects is regrown by a chemical oxidation process, which provides a high-quality insulating layer to passivate the p-Si. The carrier flux, barrier height and interfacial resistance of p-Si based MIS junction can be systematically tuned by controlling the thickness and quality of SiO layer. Under AM 1.5G illumination, the optimized p-Si/SiO/Ti/Pt photoelectrode shows an onset potential of 0.5 V vs. RHE, a maximum photocurrent of 28 mA/cm and a high applied bias photon-to-current efficiency (ABPE) of 6 %. These results have significant implications for constructing MIS photoelectrodes towards effective water splitting.

Chemical oxidation Interfacial insulating layer MIS junction Photoelectrochemical water splitting Silicon-based photocathode

SCI ; EI

英语

其他

20241916035865

Hydrogen production ; Insulation ; Metal insulator boundaries ; MIS devices ; Photoelectrochemical cells ; Silicon compounds ; Silicon oxides ; Solar power generation

Insulating Materials:413 ; Gas Fuels:522 ; Solar Power:615.2 ; Electric Batteries:702.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Products Generally:804

CHEMISTRY

2-s2.0-85192109212

Scopus

1.School of Materials,Shenzhen Campus of Sun Yat-sen University,Guangming District,Shenzhen,No. 66, Gongchang Road, Guangdong,518107,China
2.Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,518055,China

Li，Yao,Ding，Chenglong,Li，Yanming,et al. Engineering the SiOx interfacial layer of Si-based metal-insulator-semiconductor junction for photoelectrochemical hydrogen production[J]. Journal of Catalysis,2024,434.

Li，Yao.,Ding，Chenglong.,Li，Yanming.,Fang，Jiongchong.,Zeng，Guosong.,...&Li，Changli.(2024).Engineering the SiOx interfacial layer of Si-based metal-insulator-semiconductor junction for photoelectrochemical hydrogen production.Journal of Catalysis,434.

Li，Yao,et al."Engineering the SiOx interfacial layer of Si-based metal-insulator-semiconductor junction for photoelectrochemical hydrogen production".Journal of Catalysis 434(2024).