Interlayer ferroelectric polarization modulated anomalous Hall effect in four-layer MnBi2Te4 antiferromagnets

Niu，Ziyu1; Yu，Xiang Long3,4; Shao，Dingfu5; Jing，Xixiang1; Hou，Defeng1; Li，Xuhong1; Sun，Jing1; Shi，Junqin1,2; Fan，Xiaoli1,2; Cao，Tengfei1,2

2024-05-01

10.1103/PhysRevB.109.174405

Physical Review B   影响因子和分区

2469-9950

2469-9969

Van der Waals (vdW) assembly could efficiently modulate the symmetry of two-dimensional (2D) materials that ultimately governs their physical properties. Of particular interest is the ferroelectric polarization being introduced by proper vdW assembly that enables the realization of novel electronic, magnetic, and transport properties of 2D materials. Four-layer bulklike stacking antiferromagnetic MnBi2Te4 (FB-MBT) offers an excellent platform to explore ferroelectric polarization effects on magnetic order and topological transport properties of nanomaterials. Here, by applying symmetry analyses and density-functional-theory calculations, the ferroelectric interface effects on magnetic order, anomalous Hall effect (AHE) or even quantum AHE (QAHE) on the FB-MBT are analyzed. Interlayer ferroelectric polarization in FB-MBT efficiently violates the PT symmetry [the combination of central inversion (P) and time reverse (T) symmetry] of the FB-MBT by conferring magnetoelectric couplings, and stabilizes a specific antiferromagnetic order encompassing a ferromagnetic interface in the FB-MBT. We predict that engineering an interlayer polarization in the top or bottom interface of FB-MBT allows converting FB-MBT from a trivial insulator to a Chern insulator. The switching of ferroelectric polarization at the middle interfaces results in a direction reversal of the quantum anomalous Hall current. Additionally, the interlayer polarization of the top and bottom interfaces can be aligned in the same direction, and the switching of polarization direction also reverses the direction of anomalous Hall currents. Overall, our work highlights the occurrence of quantum-transport phenomena in 2D vdW four-layer antiferromagnets through vdW assembly. These phenomena are absent in the bulk or thin-film in bulklike stacking forms of MnBi2Te4.

SCI ; EI

英语

其他

PHYSICS

2-s2.0-85193041329

Scopus

1.Research Center for Advanced Lubrication and Sealing Materials,School of Materials Science and Engineering,Northwestern Polytechnical University,Xi'an,Shaanxi,710072,China
2.State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi'an,Shaanxi,710072,China
3.Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
4.International Quantum Academy,Shenzhen,518048,China
5.Key Laboratory of Materials Physics,Institute of Solid State Physics,HFIPS,Chinese Academy of Sciences,Hefei,230031,China

Niu，Ziyu,Yu，Xiang Long,Shao，Dingfu,et al. Interlayer ferroelectric polarization modulated anomalous Hall effect in four-layer MnBi2Te4 antiferromagnets[J]. Physical Review B,2024,109(17).

Niu，Ziyu.,Yu，Xiang Long.,Shao，Dingfu.,Jing，Xixiang.,Hou，Defeng.,...&Cao，Tengfei.(2024).Interlayer ferroelectric polarization modulated anomalous Hall effect in four-layer MnBi2Te4 antiferromagnets.Physical Review B,109(17).

Niu，Ziyu,et al."Interlayer ferroelectric polarization modulated anomalous Hall effect in four-layer MnBi2Te4 antiferromagnets".Physical Review B 109.17(2024).