Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique

Wang，Chengcai; Chen，Junting; Jiang，Zuoheng; Chen，Haohao

2024-05-01

10.35848/1882-0786/ad4088

Applied Physics Express   影响因子和分区

1882-0778

1882-0786

Improved p-GaN gate reliability is achieved through a simple oxygen compensation technique (OCT), which involves oxygen plasma treatment after gate opening and subsequential wet etching. The OCT compensates for the Mg acceptors near the p-GaN surface, leading to an extended depletion region under the same gate bias and thus reducing the electric field. Furthermore, the Schottky barrier height also increases by OCT. Consequently, suppressed gate leakage current and enlarged gate breakdown voltage are achieved. Notably, the maximum applicable gate bias also increases from 4 V to 8.1 V for a 10 year lifetime at a failure rate of 1%.

gallium nitride HEMT p-GaN gate reliability time-dependent gate breakdown

SCI ; EI

英语

第一 ; 通讯

2-s2.0-85192964372

Scopus

Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China

Wang，Chengcai,Chen，Junting,Jiang，Zuoheng,et al. Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique[J]. Applied Physics Express,2024,17(5).

Wang，Chengcai,Chen，Junting,Jiang，Zuoheng,&Chen，Haohao.(2024).Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique.Applied Physics Express,17(5).

Wang，Chengcai,et al."Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique".Applied Physics Express 17.5(2024).