低维材料的生长和物理性质研究

低维材料由于具有与三维材料完全不同的物理性质和可调控的潜力，近年来受到了人们的广泛关注。在低维材料中实现诸如磁性、拓扑以及它们的共存是当前凝聚态物理的一个关注焦点。尽管在过去的三十年中，物理学界在拓扑材料和低维材料的研究中取得了诸多进展，然而受限于样品制备的困难和实验表征的挑战，目前对低维材料的研究还局限在少数几类体系。本文主要针对一系列低维拓扑材料的生长和物性进行实验研究，探索单晶样品的生长调控和能带拓扑。本文主要内容安排如下：

1. 准一维材料La₃MgBi₅由于能带中具有多种类型的狄拉克费米子而受到人们的关注。本文利用基于同步辐射的角分辨光电子能谱对La₃MgBi₅的电子结构测量，结合理论计算结果，探索该体系中的非平庸拓扑能带。我们的ARPES数据表明La₃MgBi₅能带中可能存在多种类型的狄拉克点。

2.准二维材料SrAg₄Sb₂被理论预言是拓扑绝缘体，同体系化合物EuAg₄Sb₂具有磁性，可以打破系统的时间反演对称性，因此生长SrAg₄Sb₂、EuAg₄Sb₂将有望研究该体系中存在的拓扑相变。本文通过大量生长实验，系统性研究了这两个材料的生长条件，获得了高质量的单晶样品，并为后续揭露该体系中隐藏的拓扑性质及可能的拓扑相变提供了可能性。

3.二维材料EuCuBi被理论预言是一种具有可调节拓扑属性的狄拉克半金属。本文通过大量的生长及掺杂实验成功合成EuCuBi及40%Ca掺杂的Eu_0.6Ca_0.4CuBi样品。EuCuBi的磁性测量表明其具有内禀反铁磁序，Neel温度约为T_N≈12.22 K。而对掺杂样品Eu_0.6Ca_0.4CuBi的输运测量表明Eu_0.6Ca_0.4CuBi的反铁磁转变温度约为T_N≈7.3 K，相比于EuCuBi的Neel温度有着明显下降，说明Eu元素对样品中长程磁序具有明显影响。此外，对Eu_0.6Ca_0.4CuBi的磁阻测量表明在掺杂过后的样品中存在由手性反常而引起的磁阻行为，表明Eu_0.6Ca_0.4CuBi中可能仍具有拓扑性质，且掺杂过程中存在拓扑相变。目前的工作将为后续从电子结构的角度揭示这些样品中非平庸的能带拓扑结构以及掺杂对该体系材料的电子结构的调控作用提供帮助。

4. 1T-CrTe₂作为具有室温铁磁转变温度(居里温度约为T_C≈310 K)的二维铁磁性材料而备受关注。尽管由MBE生长的1T-CrTe₂薄膜已经获得了广泛的研究，然而，单晶1T-CrTe₂的研究成果仍非常少。我们探索了块材1T-CrTe₂的生长条件，但在大量实验后仅获得1T-CrTe₂的多晶样品，尚无法得到大面积高质量的1T-CrTe₂单晶样品。通过对生长方法以及生长过程的详细总结，梳理了我们在1T-CrTe₂单晶生长和制备中遇到的问题和挑战。这些工作将为后续生长高质量1T-CrTe₂单晶样品提供宝贵的经验。

我们的工作丰富了人们对低维材料的认知，并为进一步研究低维材料的输运性质及非平庸电子结构提供了新的思路。

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