半透明反式CsPbI3钙钛矿太阳能电池及其叠层器件研究

随着单结太阳能电池效率的不断提高，大幅提高效率的空间有限。为了突破单结器件的Shockley-Queisser 极限，叠层太阳能电池通过结合宽带隙和窄带隙半导体材料，可以吸收更广泛的太阳光谱，并减少总体的热能耗散，从而能够有效提高能量转换效率。CsPbI₃钙钛矿的宽带隙和热稳定性高的特点使其成为与铜铟镓硒叠层太阳能电池的理想顶电池光吸收层材料。本工作主要关注反式CsPbI₃钙钛矿及其半透明器件存在的问题，开发了一种有机小分子空穴传输材料和一种磁控溅射缓冲层材料。

        空穴传输材料2T-2TPA-2COOH与CsPbI₃钙钛矿有着良好的能级排列匹配，同时其具有较小的光学吸收和较高的空穴迁移率以及能够有效钝化钙钛矿界面。基于该空穴传输材料，制备反式CsPbI₃钙钛矿太阳能电池，其最大能量转换效率达到了18.30%。

         在基于2T-2TPA-2COOH的器件基础上，制备半透明CsPbI₃钙钛矿器件，研究了缓冲层材料在磁控溅射透明电极中的作用。将原子层沉积氧化锡替换为纳米二氧化锡缓冲层，在CsPbI₃钙钛矿器件上成功制备透明导电电极。基于该空穴传输材料与磁控溅射缓冲层材料，实现了半透明的反式CsPbI₃钙钛矿太阳能电池的制备，其效率达到了16.73%。本工作的CsPbI₃钙钛矿与铜铟镓硒太阳能电池组合的四端叠层器件效率为23.47%。

综上所述，本工作探索了半透明反式CsPbI₃钙钛矿太阳能电池器件存在的问题，关注空穴传输材料和磁控溅射缓冲材料，一定程度上解决了基础器件的效率问题和半透明器件的制备问题，展示了其在半透明太阳能电池和叠层太阳能电池中的研究潜力和应用前景。

As the efficiency of single-junction solar cells continues to improve, the scope for significant efficiency enhancements becomes limited. To surpass the Shockley-Queisser limit of single-junction devices, tandem solar cells combine wide-bandgap and narrow-bandgap semiconductor materials to absorb a broader spectrum of sunlight and reduce thermal energy dissipation, thereby effectively increasing the energy conversion efficiency. The wide bandgap and high thermal stability of CsPbI₃ perovskite make it an ideal top-cell light absorber material for tandem solar cells in conjunction with copper indium gallium selenide (CIGS). This study primarily addresses the challenges associated with inverted CsPbI₃ perovskite and its semi-transparent devices and develops an organic small molecule hole-transporting material and a magnetron sputtering buffer layer material.

         The hole-transporting material, 2T-2TPA-2COOH, exhibits good energy level alignment with CsPbI₃ perovskite, along with minimal optical absorption, high hole mobility, and effective passivation of the perovskite interface. Based on this hole-transporting material, inverted CsPbI₃ perovskite solar cells were fabricated, achieving a maximum power conversion efficiency of 18.30%.

         Semi-transparent CsPbI₃ perovskite devices were prepared based on the 2T-2TPA-2COOH devices. The role of the buffer layer material in magnetron sputtering transparent conductive electrodes was investigated. The transparent conductive electrodes fabricated successfully on CsPbI₃ perovskite devices through replacing atomic layer deposited tin oxide with nano particle tin-dioxide buffer layers. Utilizing this hole-transporting material and magnetron sputtering buffer layer material, semi-transparent inverted CsPbI₃ perovskite solar cells were prepared, achieving an efficiency of 16.73%. The four-terminal tandem device combining CsPbI₃ perovskite with CIGS solar cells demonstrated an efficiency of 23.47%.

         In summary, this study addresses the challenges of semi-transparent inverted CsPbI₃ perovskite solar cell devices, focusing on hole-transporting materials and magnetron sputtering buffer materials, which to some extent resolve efficiency and fabrication issues of basic and semi-transparent devices. This demonstrates their research potential and application prospects in semi-transparent and tandem solar cells.

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