铝硅电子封装材料的显微组织调控和性能研究

随着电子元器件的高度集成化，散热问题已经成为半导体器件性能提升的主要障碍。为了确保电子元器件的安全和稳定工作，迫切需要发展高导热、低膨胀的先进电子封装材料。Al-Si电子封装材料具备Al的高导热率（TC）和Si的低热膨胀系数（CTE），通过调控Si含量可优化热学性能，以适用不同应用领域。铝硅合金成本低、重量轻，同时具有优异的焊接性和可加工性能，因此在航空、航天、军工和消费类电子领域有广泛应用前景。本论文采用粉末热挤出工艺、热处理工艺和添加碳纳米管（CNT）制备Al-Si基电子封装材料，涵盖了从低Si含量的Al-20Si合金到高Si含量的Al-50Si合金，再到CNT/Al-50Si三元复合材料，系统研究了制备工艺、显微组织和性能之间的构效关系。

首先，通过消除共晶Si提升Al-20Si合金热学和力学性能。实验发现在低挤出温度（350 ℃）获得的超细共晶Si颗粒（~500 nm）样品的热膨胀系数较高，而高温550 ℃挤出的具有较粗的Si颗粒的样品具有最低热膨胀系数。这与传统上认为均匀细小的Si颗粒可以降低Al-Si电子封装材料热膨胀系数的规律相反。本研究通过原位热分析方法发现细小共晶Si在受热过程中发生溶解或团聚，Al基体内部压应力瞬间释放，从而导致热膨胀系数异常升高。而采用高温550 ℃的热挤出消除了共晶Si，引入了低膨胀系数的原位Al₂O₃颗粒，稳定了组织结构，从而获得了具有低热膨胀系数的Al-20Si合金。为了进一步减少小颗粒共晶Si对热学和力学性能的影响，在热挤出前对Al-20Si粉末进行550 ℃热处理，以消除粉末内部的共晶Si颗粒，提高了材料的塑性变形能力，降低了电子和声子的散射，从而提升了热导率。所制备的Al-20Si合金综合性能优异，致密度高达100%，抗拉强度~170 MPa，伸长率~10.8%，热导率~195 Wm^-1K^-1，热膨胀系数约为14×10^-6/K。与未进行粉末热处理的合金相比，其伸长率提升了130%，热导率提升了20%，热膨胀系数降低了约14%。

其次，通过热处理工艺调控Al和Si的晶粒尺寸，实现了Al-50Si合金热导率的提升。采用粉末热挤出工艺和铜包套制备了高质量无裂纹的Al-50Si合金，发现增大粉末粒径和提高挤出温度可以提升热导率。在共晶点之下的550 ℃对Al-50Si合金进行热处理，发现材料的热导率随热处理温度和时间的升高呈现波动性提高，这主要归因于Si颗粒的动态溶解和析出，导致Al发生二次再结晶，使得晶粒尺寸出现波动。随后通过两阶段热处理工艺（850 ℃×2 h-550 ℃×140 h），获得尺寸~1 mm Al晶粒和80 μm Si晶粒的组织结构，其热导率高达~180 Wm^-1K^-1。

最后，通过添加CNT进一步改善Al-50Si合金的热学和力学性能。采用原位化学气相沉积制备了Al-CNT和CNT/Al-50Si复合粉末。研究发现原位气相沉积能够获得均匀分散的CNT，避免粉末严重氧化，保证粉末结构完整性，保证复合材料具有较高热导率。在随后的热处理过程中（850 ℃×2 h），CNT/Al-50Si复合材料中的CNT逐步发生反应，先生成Al₄C₃然后转化为共晶SiC（Al），最终形成颗粒状SiC。原位引入SiC后，Al-50Si合金的热膨胀系数显著降低至约8.7×10^-6/K，同时保持了优异的热导率和抗弯强度，分别为约162 Wm^-1K^-1和253 MPa。

本论文通过消除共晶Si、调控晶粒尺寸和添加CNT对Al-Si基电子封装材料组织进行调控，实现了材料的热学和力学性能的提升，揭示了组织结构对性能的影响机制。研究结果为获得优异热力学性能的Al-Si基电子封装材料提供了重要的理论依据。

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