基于IGZO薄膜忆阻器件的研究

  在大数据、人工智能和云计算等领域的迅猛发展的当下，人们对于数据存储和处理的需求日益增长。忆阻器凭借其器件结构简单、读/写速度较快、功耗较低、高低阻态（HRS/LRS）的阻值保持时间较长、存储密度较高、可扩展性强以及和互补金属氧化物半导体（CMOS）工艺兼容等优点，展现出成为新一代非易失性存储器的巨大潜力。同时，忆阻器件的电导可以连续可调，类似于生物神经突触的权重调节机制，在模拟生物神经突触功能方面也具有潜在的应用价值。本论文将聚焦于以InGaZnO（IGZO）材料为基础的忆阻器件，探究IGZO忆阻器件的工作机制和存储性能，以及忆阻器件的突触可塑性。

  针对阳离子迁移型IGZO忆阻器，设计并制备了Ag/IGZO/Pt 结构的忆阻器件。研究发现，Ag/IGZO/Pt 器件的电学特性呈现出双极性，其工作机制是通过 Ag 离子的迁移形成Ag导电细丝，通过调控器件的Ag电极和Pt电极间导电细丝的通断来改变其电阻态。为了改善Ag/IGZO/Pt 器件的开关性能，我们在IGZO层和Pt电极之间插入3 nm厚的HfAlO_x修饰层。与Ag/IGZO/Pt 器件相比，Ag/IGZO/HfAlO_x/Pt 器件具有更低的开关电压、更快的开关速度（~20 ns）、更低的开关能（~8 pJ）和功耗等优点。此外，在V_set 的稳定性和均匀性方面也得到大幅度提高，且展现出长的HRS/LRS保持时间（85℃下，超过10⁴ s）、高的开关比（大于5×10²）以及大气条件下超过10³ 次的脉冲循环耐久性。IGZO忆阻器件的开关性能的改善可归因于HfAlO_x层对Ag导电细丝形成和断裂的位置以及界面效应更有效的调控。

  针对阴离子迁移型IGZO忆阻器，设计并制备了Pt/IGZO/Ti 结构的忆阻器件。研究表明，Pt/IGZO/Ti 器件的阻变机制是通过O^2- 的迁移形成的氧空位导电细丝来实现，并通过控制连通Pt电极和Ti电极间导电细丝的通断来改变其电阻态。为了获得多级存储性能稳定的IGZO忆阻器件，我们通过电感耦合氧等离子体氧化法制备出Pt/IGZO/TiO₂/Ti 结构的忆阻器件。研究表明，与Pt/IGZO/Ti 器件相比，Pt/IGZO/TiO₂/Ti 器件的开关电压更小、HRS/LRS更加稳定、多级存储性能也更优异、循环耐久性更高（>10³ 次）、多级存储态的保持时间更长（>10⁵ s）等。经分析可知，主要原因是采用氧等离子体氧化生成的TiO₂层可以存储复位过程中IGZO介质层内残留的游离态氧离子，从而提高Pt/IGZO/TiO₂/Ti 忆阻器件多级存储的稳定性。

  针对电感耦合氧等离子体氧化法制备的Pt/IGZO/TiO₂/Ti 忆阻器件，采用直流电压信号、脉冲三角波电压信号和脉冲矩形波电压信号对其进行突触可塑性测试。研究发现，Pt/IGZO/TiO₂/Ti 器件具有良好的突触增强和抑制可塑性，在连续的正脉冲信号刺激下，其器件的电导不断增加后趋于稳定，在连续的负脉冲信号刺激下，其器件的电导不断递减后趋于稳定。在脉冲电压信号（1 V/1 μs）下，能够实现学习-遗忘-再学习过程的模拟。

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