Investigation of Nitrogen-Based Plasma Passivation on GaN RF HEMTs Using Various Precursors

Qiaoyu Hu1; Wei-Chih Cheng1; Xiguang Chen1; Chenkai Deng1; Lina Liao1; Wenmao Li1; Yang Jiang1; Jiaqi He1; Yi Zhang1; Chuying Tang1; Peiran Wang1; Kangyao Wen1; Fangzhou Du1; Yifan Cui1; Mujun Li1; Wenyue Yu1; Robert Sokolovskij1; Nick Tao2; Qing Wang1,3,4,5,6; Hongyu Yu1,3,4,5,6

2024

10.1109/JEDS.2024.3412186

IEEE Journal of the Electron Devices Society   影响因子和分区

2168-6734

This study investigates the DC and RF performance of RF GaN High Electron Mobility Transistors (HEMTs) subjected to surface pretreatments by N2 and N2O plasma. The filling of nitrogen vacancies or the passivation effect introduced by the thin GaON layer result in enhanced DC characteristics and RF performance for devices treated with nitrogen-based plasma. Compared to the untreated device, the device treated with N2 plasma exhibited a significant improvement in performance i.e. the saturated current increased by approximately 16%, the characteristic frequency (fT) had an increase of 27.6 GHz, the maximum oscillating frequency (fmax) increased by 60.4 GHz. Furthermore, the breakdown voltage had a 10.7% increase, and the dynamic/static on-resistance ratio decreased from 1.34 to 1.18. These results highlight the potential of nitrogen-based plasma treatments in improving the performance of RF GaN HEMTs.

EI

第一

1.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
2.Maxscend Microelectrics Company Limited, Wuxi, China
3.Ministry of Education, Engineering Research Center of Integrated Circuits for Next-Generation Communications, Southern University of Science and Technology, Shenzhen, China
4.GaN Device Engineering Technology Research Center of Guangdong, Southern University of Science and Technology, Shenzhen, China
5.Key Laboratory of the Third Generation Semi-conductor, Southern University of Science and Technology, Shenzhen, China
6.Engineering Research Center of Three Dimensional Integration in Guangdong Province, Southern University of Science and Technology, Shenzhen, China

Qiaoyu Hu,Wei-Chih Cheng,Xiguang Chen,et al. Investigation of Nitrogen-Based Plasma Passivation on GaN RF HEMTs Using Various Precursors[J]. IEEE Journal of the Electron Devices Society,2024,PP(99).

Qiaoyu Hu.,Wei-Chih Cheng.,Xiguang Chen.,Chenkai Deng.,Lina Liao.,...&Hongyu Yu.(2024).Investigation of Nitrogen-Based Plasma Passivation on GaN RF HEMTs Using Various Precursors.IEEE Journal of the Electron Devices Society,PP(99).

Qiaoyu Hu,et al."Investigation of Nitrogen-Based Plasma Passivation on GaN RF HEMTs Using Various Precursors".IEEE Journal of the Electron Devices Society PP.99(2024).