Tailoring interfacial states for improved n-type bismuth telluride thermoelectrics

Luo，Kaiyi1; Chen，Haowen1; Hu，Wenyu2; Qian，Pingping1; Guo，Junbiao1; Deng，Yixiao1; Yang，Lei4; Sun，Qiang5,6; Liu，Lin1; Cao，Lei1; Qiu，Wenbin7; Tang，Jun1,3

2024-09-01

10.1016/j.nanoen.2024.109845

Nano Energy   影响因子和分区

2211-2855

Efforts to enhance the thermoelectric (TE) efficiency of n-type bismuth telluride (BTS) have focused on leveraging 2D nanostructures, as they have been proven effective in inhibiting phonon transport and simultaneously improving electrical properties. Herein, we introduce g-CN as a suitable candidate for disrupting phonon transport, with the potential to finely tune charge carrier mobility. Crucially, our investigation provides insights into the potential of externally introduced conducting states as a feasible strategy for facilitating carrier transport at heterogeneous interfaces. In contrast, the carrier scattering and localization events play an inverse role. By carefully modulating the competition, we effectively increase carrier mobility, boosting electrical conductivity and optimizing the power factor. This orchestrated strategy leads to a high figure of merit (ZT) of 1.29 at 400 K and an average ZT (ZT) of 1.20 within 300–500 K. At temperature difference ∆T = 180 K, a maximum power output P = 0.91 W and a 6.2 % conversion efficiency (η) can be achieved over the fabricated TE module. Our findings underscore the potential of 2D nanomaterials and interfacial engineering (IE) as a promising avenue for unlocking the full potential of n-type thermoelectric materials, advancing sustainable and efficient TE power generation.

2D nanostructures Bismuth telluride Interfacial engineering Thermoelectrics

SCI ; EI

英语

其他

20242416255401

Bismuth compounds ; Carrier mobility ; Carrier transport ; Conversion efficiency ; Interface states ; Phonons ; Thermoelectric equipment ; Thermoelectricity

Energy Conversion Issues:525.5 ; Thermoelectric Energy:615.4 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Nanotechnology:761 ; Classical Physics; Quantum Theory; Relativity:931 ; High Energy Physics; Nuclear Physics; Plasma Physics:932 ; Solid State Physics:933

2-s2.0-85195669214

Scopus

1.Key Laboratory of Radiation Physics and Technology of Ministry of Education,Institute of Nuclear Science and Technology,Sichuan University,Chengdu,610064,China
2.Department of Physics,College of Science,Southern University of Science and Technology,Shenzhen,518055,China
3.College of Physics,Sichuan University,Chengdu,610064,China
4.School of Materials Science & Engineering,Sichuan University,Chengdu,610064,China
5.State Key Laboratory of Oral Diseases,National Clinical Research Center for Oral Diseases,West China Hospital of Stomatology,Sichuan University,Chengdu,610041,China
6.Sichuan Provincial Engineering Research Center of Oral Biomaterials,Chengdu,610041,China
7.Department of Fundamental Courses,Wuxi Institute of Technology,Wuxi,214121,China

Luo，Kaiyi,Chen，Haowen,Hu，Wenyu,et al. Tailoring interfacial states for improved n-type bismuth telluride thermoelectrics[J]. Nano Energy,2024,128.

Luo，Kaiyi.,Chen，Haowen.,Hu，Wenyu.,Qian，Pingping.,Guo，Junbiao.,...&Tang，Jun.(2024).Tailoring interfacial states for improved n-type bismuth telluride thermoelectrics.Nano Energy,128.

Luo，Kaiyi,et al."Tailoring interfacial states for improved n-type bismuth telluride thermoelectrics".Nano Energy 128(2024).