A voltage-driven dual-mode MoSe2 photodetector with graphene as van der Waals contact

Xia，Zhonghui1; Wang，Sujuan1; Liu，Xueting1; Chen，Hongyu1; Su，Longxing2,3

2024-08-23

10.1088/1361-6463/ad4660

Journal of Physics D: Applied Physics   影响因子和分区

0022-3727

1361-6463

Two-dimensional (2D) molybdenum selenide (MoSe) is promising for use in the development of photodetectors for the harvesting of light from the ultraviolet to the near-infrared band, while high responsivity and fast response speed are difficult to simultaneously realize. Herein, we present a dual-mode MoSe photodetector with asymmetric electrodes, in which graphene and Cr metal are utilized as ohmic and Schottky contacts, respectively. The photodiode possesses fabulous Schottky characteristics, with a rectification ratio of ∼250 and a low dark current of ∼40 pA at −1 V. Under forward bias voltage of 1 V, the photodetector works in photoconductive mode with a slow response speed (decay time: ∼5 min) but high responsivity (632 mA W). However, at reverse bias voltage, the photodetector acts as a photovoltaic-type device due to the Schottky barrier between Cr and MoSe. Because of the reinforced built-in electric field, the photodetector driven at −5 V shows much faster response speeds (rise time: 1.96 ms; decay time: 755 µs). This study provides a deep understanding of asymmetric structure MoSe photodetectors operated in two modes, which promotes a forward step toward 2D material optoelectronics.

2D materials dual-mode photodetector van der Waals contact

SCI ; EI

英语

其他

20242216180936

Bias voltage ; Diodes ; Electric fields ; Electric rectifiers ; Graphene ; Infrared devices ; Molybdenum compounds ; Photons ; Schottky barrier diodes ; Selenium compounds ; Van der Waals forces

Electricity: Basic Concepts and Phenomena:701.1 ; Electronic Circuits:713 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Chemical Products Generally:804 ; Atomic and Molecular Physics:931.3

PHYSICS

2-s2.0-85194367756

Scopus

1.School of Semiconductor Science and Technology,South China Normal University,Guangzhou,510631,China
2.International School of Microelectronics,Dongguan University of Technology,Dongguan,523808,China
3.School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China

Xia，Zhonghui,Wang，Sujuan,Liu，Xueting,et al. A voltage-driven dual-mode MoSe2 photodetector with graphene as van der Waals contact[J]. Journal of Physics D: Applied Physics,2024,57(33).

Xia，Zhonghui,Wang，Sujuan,Liu，Xueting,Chen，Hongyu,&Su，Longxing.(2024).A voltage-driven dual-mode MoSe2 photodetector with graphene as van der Waals contact.Journal of Physics D: Applied Physics,57(33).

Xia，Zhonghui,et al."A voltage-driven dual-mode MoSe2 photodetector with graphene as van der Waals contact".Journal of Physics D: Applied Physics 57.33(2024).