量子计算超低温MOSFET阈值电压物理机理及其芯片设计建模的研究

量子计算被认为是后摩尔定律时代最具潜力实现更高算力的技术路径之一。 基于硅基和超导量子比特的量子计算机是目前两种较为主流的实现方式。硅基和 超导量子比特都需要在毫开（mK）温度级别的超低温环境下才能工作，用于读取 和控制量子比特信号的CMOS测控电路目前普遍被放置在4K的低温环境下，未 来甚至有将量子比特与CMOS测控电路通过不同工程实现方式集成到单芯片的设 想，这意味着CMOS芯片在未来可能需要工作在毫开温度环境下。随着温度下降 到4K乃至以下的超低温环境，诸多不同的材料与器件物理机制都会随之发生重 大改变，这需要对此前业界已建立在常温下的器件物理框架，以及由此所建立的 芯片设计紧凑模型进行重新审视、研究乃至某些部分的重构。EDA电路设计工具 无法准确地对超低温下的晶体管器件行为进行有效仿真，使超低温CMOS电路设 计颇具挑战。 就低温CMOS器件建模而言，从超低温测试始就面临一系列挑战，例如线缆 数量、制冷功率、噪声等。精确的超低温实验数据较难获取，外加与常温不同的物 理机理和现象需要深入探究等挑战，当前业界现状是不同领军团队采取了不同的 建模策略，基于经验公式的工程建模与物理机理研究并举，且后者采取先易后难 的方式逐渐推进。故基于明确物理意义的框架性建模，即便只是针对某一关键器 件物理参数比如MOSFET阈值电压，也在不断摸索研发的过程之中。 本文介绍了超低温环境下的MOSFET阈值电压这一重要参数，进行基于物理 意义的框架性建模的基础性工作：首先通过对器件尺寸的实验设计，进行了五次 流片，其中包括台积电（TSMC）180nm和40nm两个工艺节点。在对NMOS和 PMOS分别进行多个温区的测试表征，参数提取，量化分析后，在深刻理解物理机 理，并开发出相应数学公式的基础上，进行了适合于芯片设计工程计算的超低温 CMOS阈值电压的紧凑模型建模。作为超低温阈值电压物理机理研究及建模的第 一步，本工作聚焦于大尺寸Bulk阈值电压模型。在该工作取得突破性进展的基础 上，对后续工作，即MOSFET尺寸微缩所产生的各种复杂二级效应，进行了前瞻 性的理论与建模思路探讨，为后续的阈值电压框架性建模铺就基础。

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