MOSFET阈值电压及金属互联电阻低温模型研究及其在LC振荡器低温设计上的应用

量子计算被认为是最有可能在后摩尔定律时代实现颠覆性算力的重要 技术路线之一，近二十年来受到了日益广泛的关注而处于高速发展阶段。 其中基于超导和硅基这两种量子比特的路径尤为受到国际科技巨头的青睐， 而这两种技术均需要将量子比特置于 100 mK 甚至更低的超低温环境下。 在量子计算机发展的早期，由于量子比特数目较少，对超低温区量子比特 的控制与测量是通过缆线接入的方式进行。但随着量子比特的增多，当前 主流方式是将具有测控功能的CMOS芯片置入4 K温区，与处于超低温的 量子比特进行对接。未来则有将量子比特与 CMOS 测控电路进一步通过不 同技术手段集成实现单芯片的技术设想，由此超低温 CMOS 技术（cryo CMOS）便应运而生。

超低温 CMOS 因其高集成性的特点，可以极大的提高量子计算机的拓 展性和性能。虽然 CMOS 技术目前已具有优秀的集成特性和完善的产业基 础。但作为量子计算的周围电路设计使用仍然缺乏模型指导，严重阻碍了 超低温电路的研究。

本文所介绍的工作主要分为三大部分，均基于台积电（TSMC）标准 CMOS 180 nm 和 40nm 两个工艺节点的设计及流片结果：首先是对有源 （active）MOS 晶体管关键参数阈值电压的建模工作，即对标准 NMOS 和 PMOS 器件阵列进行设计和流片，随后在对多个超低温测试平台进行实验 摸索的基础上，在不同温区对所流片的MOS器件进行测试与表征，并基于 实验测试数据萃取 MOSFET 的关键参数，通过分析低温下影响阈值电压的 物理机制，针对大尺寸器件阈值电压建立了物理解析模型；其次是对 CMOS 片上无源（passive）金属互联电阻在宽温区的模型分析研究及 Verilog-A 实现，并在宽温区进行测试，将实验测试结果与模型进行拟合； 最后是结合金属互联电阻模型与超低温 MOSFET 器件特性，对宽温区下 LC 振荡器的振荡情况进行定量分析，对比振荡器表征数据，由此可以较好 地预测低温下LC振荡器的工作状态。

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