III-Nitride Optochip-in-Sphere for Dual-Axis Angle Detection

Tingxuan Chen1,2; Ruoyao Huang1,2; Ling Zhu3,4; Kwai Hei Li1

2024

10.1109/LED.2024.3416109

IEEE Electron Device Letters   影响因子和分区

1558-0563

An in-sphere GaN-based optochip for dual-axis angle detection is introduced. It comprises a cross-shaped optochip enclosed in a glass sphere with mineral oil as a liquid pendulum. The optochip monolithically integrates a light emitter and four photodetectors on a sapphire substrate. The device responds linearly to ± 90° angles in both the X- and Y-axes, with sensitivities of 39 nA/° and 37 nA/°, respectively. The device exhibits fast fall and rise times of 0.143 s and 0.084 s, respectively, and a high resolution of 0.05°. Its compact configuration facilitates its applicability in human posture monitoring and robot movement detection.

SCI ; EI

第一

ENGINEERING

1.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
2.College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
3.State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), Shenzhen, China
4.College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, China

Tingxuan Chen,Ruoyao Huang,Ling Zhu,et al. III-Nitride Optochip-in-Sphere for Dual-Axis Angle Detection[J]. IEEE Electron Device Letters,2024,PP(99).

Tingxuan Chen,Ruoyao Huang,Ling Zhu,&Kwai Hei Li.(2024).III-Nitride Optochip-in-Sphere for Dual-Axis Angle Detection.IEEE Electron Device Letters,PP(99).

Tingxuan Chen,et al."III-Nitride Optochip-in-Sphere for Dual-Axis Angle Detection".IEEE Electron Device Letters PP.99(2024).