Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction

Han, Hecheng; Zhang, Baoqing; Zhang, Zihao; Wang, Yiming; Liu, Chuan; Singh, Arun Kumar; Song, Aimin; Li, Yuxiang; Jin, Jidong; Zhang, Jiawei

2024-07-01

10.1021/acs.nanolett.4c01679

NANO LETTERS   影响因子和分区

1530-6984

1530-6992

Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on asymmetric heterostructures, which are challenging to fabricate. AATs used for photodetection are accompanied by dark currents that prove difficult to suppress, resulting in reduced sensitivity. This work presents light-triggered AATs based on an in-plane lateral WSe2 homojunction without van der Waals heterostructures. In this device, the WSe2 channel is partially electrically controlled by the back gate due to the screening effect of the bottom electrode, resulting in a homojunction that is dynamically modulated with gate voltage, exhibiting electrostatically reconfigurable and light-triggered anti-ambipolar behaviors. It exhibits high responsivity (188 A/W) and detectivity (8.94 x 10(14) Jones) under 635 nm illumination with a low power density of 0.23 mu W/cm(2), promising a new approach to low-power, high-performance photodetectors. Moreover, the device demonstrates efficient self-driven photodetection. Furthermore, ternary inverters are realized using monolithic WSe2, simplifying the manufacturing of multivalued logic devices.

weak light detection asymmetric structure self-driven photodetection light-triggered anti-ambipolartransistors

SCI ; EI

英语

其他

National Key Research and Development Program of China["2022YFA1405200","2022YFB3603900"] ; National Natural Science Foundation of China["62074094","62204143"] ; Royal Society grants["IEC\\R2\\170155","NA170415"] ; Natural Science Foundation of Shandong Province["ZR2020ZD03","ZR2022ZD04","ZR2022ZD05","ZR2020QF082"] ; Natural Science Foundation of Jiangsu Province[BK20200221] ; Key Research and Development Program of Shandong Province[2017GGX10111]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:001261350500001

AMER CHEMICAL SOC

20242816667894

Logic devices ; Many valued logics ; Photodetectors ; Van der Waals forces

Computer Theory, Includes Formal Logic, Automata Theory, Switching Theory, Programming Theory:721.1 ; Logic Elements:721.2 ; Physical Chemistry:801.4 ; Atomic and Molecular Physics:931.3

MATERIALS SCIENCE

Web of Science

1.Shandong Univ, Sch Integrated Circuit, Shandong Technol Ctr Nanodevices & Integrat, Jinan 250101, Peoples R China
2.Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China
3.Punjab Engn Coll Deemed Univ, Dept Elect & Commun Engn, Chandigarh 160012, India
4.Univ Manchester, Dept Elect & Elect Engn, Manchester M13 9PL, England
5.Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen 518055, Peoples R China
6.Hanyang Univ, Dept Photon & Nanoelect, Ansan 15588, South Korea

Han, Hecheng,Zhang, Baoqing,Zhang, Zihao,et al. Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction[J]. NANO LETTERS,2024,24:8602-8608.

Han, Hecheng.,Zhang, Baoqing.,Zhang, Zihao.,Wang, Yiming.,Liu, Chuan.,...&Zhang, Jiawei.(2024).Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction.NANO LETTERS,24,8602-8608.

Han, Hecheng,et al."Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction".NANO LETTERS 24(2024):8602-8608.