南方科技大学知识苑(SUSTech KC): TiO<sub>2</sub>-Based Schottky Diodes as Bidirectional Switches for Bipolar Resistive Memories

题名	TiO₂-Based Schottky Diodes as Bidirectional Switches for Bipolar Resistive Memories
作者	Zhang, Xijian ; Jin, Jidong ; Kim, Jaekyun ; Balocco, Claudio ; Zhang, Jiawei ; Song, Aimin
通讯作者	Song, Aimin
发表日期	2024-06-01
DOI	10.1002/pssr.202400156
发表期刊	PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 影响因子和分区
ISSN	1862-6254
EISSN	1862-6270
摘要	This study presents TiO2-based Schottky diodes designed as bidirectional switches for bipolar resistive memories. The TiO2 films in these Schottky diodes are prepared through an anodization process. The reverse current of these diodes exhibits an exponential increase with rising reverse voltage, ultimately matching the forward current. When two diodes are connected back-to-back, they demonstrate superior current-voltage symmetry and provide a wider off-state voltage range compared to a single diode, reaching up to 3.65 V. The adjustable off-state voltage range (0.40-3.65 V) of the switch, whether utilizing two diodes or a single diode, correlates well with the TiO2 layer thickness and oxygen partial pressure during Pt electrode sputtering. These diodes possess bidirectional switching characteristics and can serve as effective switch elements to address the sneak-path issue in bipolar resistive memories.
关键词	bidirectional switches bipolar resistive memory Schottky diodes titanium oxide
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	其他
资助项目	National Natural Science Foundation of China[62074094] ; Natural Science Foundation of Shandong Province[ZR2022ZD04] ; Korea Basic Science Institute (National Research Facilities and Equipment Center) - Ministry of Education[2021R1A6C101A405] ; null[2022YFB3603900]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:001259512600001
出版者	WILEY-V C H VERLAG GMBH
来源库	Web of Science
引用统计
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/783921
专题	南方科技大学
作者单位	1.Shandong Univ, Shandong Technol Ctr Nanodevices & Integrat, Sch Integrated Circuits, Jinan 250100, Peoples R China 2.Hanyang Univ, Dept Photon & Nanoelect, Ansan 15588, South Korea 3.Univ Durham, Dept Engn, Durham DH1 3LE, England 4.Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen 518055, Peoples R China 5.Univ Manchester, Dept Elect & Elect Engn, Manchester M13 9PL, England
推荐引用方式 GB/T 7714	Zhang, Xijian,Jin, Jidong,Kim, Jaekyun,et al. TiO₂-Based Schottky Diodes as Bidirectional Switches for Bipolar Resistive Memories[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2024.
APA	Zhang, Xijian,Jin, Jidong,Kim, Jaekyun,Balocco, Claudio,Zhang, Jiawei,&Song, Aimin.(2024).TiO₂-Based Schottky Diodes as Bidirectional Switches for Bipolar Resistive Memories.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS.
MLA	Zhang, Xijian,et al."TiO₂-Based Schottky Diodes as Bidirectional Switches for Bipolar Resistive Memories".PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2024).