In-situ TEM investigation of dislocation healing and recrystallization in nanoscratched silicon at elevated temperatures up to 800 °C

Li, Zhen1,2,3; Zhang, Liangchi1,2,3

2024-08-01

10.1016/j.jmrt.2024.06.232

JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T   影响因子和分区

2238-7854

2214-0697

Nanoscratching introduces detrimental surface and subsurface defects like amorphous regions, dislocations, and stacking faults in monocrystalline silicon, hindering its application in microelectronics and high-performance optics. This study leverages in-situ transmission electron microscopy to unveil the thermal evolution of these defects in atomic scale. A key finding is the amorphous phase recrystallization starting at similar to 500 degrees C. Epitaxial growth from the crystalline-amorphous boundary, guided by adjacent crystal planes, restores the original diamond structure phase. By 700 - 800 degrees C, almost complete recrystallization occurs, maintaining similar interplanar spacing despite residual crystal distortions and dislocations. Notably, heating above 600 degrees C results in the gradual vanishing of stacking faults, suggesting a dynamic thermal evolution of the crystal defects induced by surface nanoscratching. This work demonstrates thermal annealing as a promising strategy to mitigate nanoscratchinduced defects, paving the way for defect-free-surface of silicon components in ultra-precision machining processes. It offers valuable insights into the interplay between nanoscratching, temperature, and defect evolution, laying the groundwork for surface and subsurface defects elimination in silicon under thermal fields.

Monocrystalline silicon Surface nanoscratching Surface and subsurface defects Thermal evolution Crystallization behavior In-situ TEM

SCI ; EI

英语

通讯

National Natural Science Foundation of China[52293401] ; Guangdong Specific Discipline Project[2020ZDZX2006] ; Shenzhen Key Laboratory of Cross Scale Manufacturing Mechanics Project[ZDSYS20200810171201007] ; High Level of Special Funds["G0303200002","G03034K003"] ; Shenzhen Science and Technology Program[JCYJ20220530114805012] ; Guangdong Basic and Applied Basic Research Foundation[2024A1515010046]

Materials Science ; Metallurgy & Metallurgical Engineering

Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering

WOS:001265589500001

ELSEVIER

20242716599953

Crystal structure ; Crystalline materials ; Crystallization ; High resolution transmission electron microscopy ; Microelectronics ; Monocrystalline silicon ; Stacking faults

Metallurgy:531.1 ; Single Element Semiconducting Materials:712.1.1 ; Optical Devices and Systems:741.3 ; Chemical Operations:802.3 ; Crystalline Solids:933.1 ; Crystal Lattice:933.1.1

Web of Science

1.Shenzhen Key Lab Cross Scale Mfg Mech, Shenzhen, Peoples R China
2.SUSTech Inst Mfg Innovat, Shenzhen, Peoples R China
3.Southern Univ Sci & Technol, Dept Mech & Aerosp Engn, Shenzhen 518055, Guangdong, Peoples R China

Li, Zhen,Zhang, Liangchi. In-situ TEM investigation of dislocation healing and recrystallization in nanoscratched silicon at elevated temperatures up to 800 °C[J]. JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T,2024,31:1939-1944.

Li, Zhen,&Zhang, Liangchi.(2024).In-situ TEM investigation of dislocation healing and recrystallization in nanoscratched silicon at elevated temperatures up to 800 °C.JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T,31,1939-1944.

Li, Zhen,et al."In-situ TEM investigation of dislocation healing and recrystallization in nanoscratched silicon at elevated temperatures up to 800 °C".JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T 31(2024):1939-1944.