High-Performance Self-Driven Polarization-Sensitive Imaging Photodetectors based on Fully Depleted T-MoSe₂/GeSe/B-MoSe₂ Van der Waals Dual-Heterojunction

An, Kang1,2; Pan, Yuan1,2; Rong, Ximing3; Zheng, Tao1,2; Li, Ling1,2; Sun, Huiru1,2; Zeng, Jiang1,2; Sang, Yuheng1,2; Huang, Feiyong1,2; Yue, Dewu4; Yoo, Won Jong5; Chen, Hongyu1,2

2024-07-01

10.1002/adfm.202409331

ADVANCED FUNCTIONAL MATERIALS   影响因子和分区

1616-301X

1616-3028

New 2D materials with low-symmetry structures aroused great interest in developing monolithic polarization-sensitive photodetectors with small volumes, which can provide a new degree of freedom for more information in night, fog, and smoke environments. However, at least half of them presented a small anisotropy with an anisotropic factor (approximate to 2) of photocurrent up to now. Herein, after systematic investigation of the optical anisotropies of GeSe nanosheets, a novel self-driven polarization-sensitive imaging photodetector with excellent performance based on a Top-MoSe2/GeSe/Bottom-MoSe2 (T-MoSe2/GeSe/B-MoSe2) van der Waals dual-heterojunction is proposed. Benefitting from the effective separation and shortening transmission distance of photocarriers by fully depleted Van der Waals dual-heterojunction on both sides of in-plane anisotropy of GeSe, the anisotropic photocurrent ratio (I-max/I-min) of T-MoSe2/GeSe/B-MoSe2 photodetector can reach as high as 12.5 (635 nm, 0 V). This value is 3.5-fold higher than that of MoSe2/GeSe photodetector, and 7-fold higher than that of the pristine GeSe photodetector in this work. The responsivity of the T-MoSe2/GeSe/B-MoSe2 photodetector (206 mA W-1, 0 V) is 5 times higher than that of the MoSe2/GeSe photodetector. In addition, the T-MoSe2/GeSe/B-MoSe2 photodetector exhibited a high light on/off ratio of 4 x 10(4) at 0 V. This work provides novel insights for developing high-performance polarization-sensitive imaging photodetectors.

2D material GeSe MoSe2 polarization-sensitive photodetector van der Waals dual-heterojunction

SCI ; EI

英语

其他

Guangdong Basic and Applied Basic Research Foundation[2022A1515011242] ; National Natural Science Foundation of China["12104319","61874037"] ; Open Research Fund of Songshan Lake Materials Laboratory[2021SLABFN01] ; Science and Technology Program of Guangzhou[202102021121]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:001261289900001

WILEY-V C H VERLAG GMBH

MATERIALS SCIENCE

Web of Science

1.South China Normal Univ, Inst Semicond Sci & Technol, Foshan 528225, Peoples R China
2.Guangdong Prov Key Lab Chip & Integrat Technol, P, R China, Guangzhou 510631, Peoples R China
3.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Guangdong Prov Key Lab Sustainable Biomimet Mat &, Shenzhen 518055, Peoples R China
4.Shenzhen Inst Informat Technol, Informat Technol Res Inst, Shenzhen 518055, Peoples R China
5.Sungkyunkwan Univ, SKKU Adv Inst Nano Technol, Suwon 16419, South Korea

An, Kang,Pan, Yuan,Rong, Ximing,et al. High-Performance Self-Driven Polarization-Sensitive Imaging Photodetectors based on Fully Depleted T-MoSe₂/GeSe/B-MoSe₂ Van der Waals Dual-Heterojunction[J]. ADVANCED FUNCTIONAL MATERIALS,2024.

An, Kang.,Pan, Yuan.,Rong, Ximing.,Zheng, Tao.,Li, Ling.,...&Chen, Hongyu.(2024).High-Performance Self-Driven Polarization-Sensitive Imaging Photodetectors based on Fully Depleted T-MoSe₂/GeSe/B-MoSe₂ Van der Waals Dual-Heterojunction.ADVANCED FUNCTIONAL MATERIALS.

An, Kang,et al."High-Performance Self-Driven Polarization-Sensitive Imaging Photodetectors based on Fully Depleted T-MoSe₂/GeSe/B-MoSe₂ Van der Waals Dual-Heterojunction".ADVANCED FUNCTIONAL MATERIALS (2024).