One-volt oxide based complementary circuit

Wang, Junjie1; Lin, Xiaoyu1; Li, Yuxiang1; Xin, Qian1; Song, Aimin2,3; Kim, Jaekyun4; Jin, Jidong4; Zhang, Jiawei1

2024-07-01

10.1063/5.0215815

AIP ADVANCES   影响因子和分区

2158-3226

In low-power electronics, there is a substantial demand for high-performance p-type oxide thin-film transistors (TFTs) that are capable of efficient operation at low voltages. In this study, we employ anodization to form an aluminum oxide gate dielectric layer, enabling the fabrication of p-type tin oxide (SnO) TFTs that effectively operate at a low voltage of 1 V. Under optimal device fabrication conditions, the SnO TFT demonstrates an on/off current ratio exceeding 10(3) and a saturation mobility of 1.94 cm(2) V-1 s(-1) at 1 V operation. The optimal SnO TFT fabrication conditions are subsequently used to fabricate a complementary inverter, comprising a SnO TFT and an n-type indium gallium zinc oxide TFT, achieving a gain of up to 38 at a 1 V supply voltage. Notably, the inverter's switching point voltage is finely tuned to the ideal value, precisely half of the supply voltage. This oxide-based complementary inverter showcases promising potential in low-power electronics.

SCI ; EI

英语

其他

National Key Research and Development Program of China[2022YFB3603900] ; Natural Science Foundation of Shandong Province["ZR2022ZD04","ZR2022ZD05","ZR2020QF082"] ; National Natural Science Foundation of China["62074094","62204143"] ; Technology Innovation Program - Ministry of Trade, Industry & Energy (MOTIE, Korea)[20016350]

Science & Technology - Other Topics ; Materials Science ; Physics

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:001262290100008

AIP Publishing

20242816672064

Alumina ; Aluminum oxide ; Electric inverters ; Fabrication ; Gallium compounds ; Gate dielectrics ; II-VI semiconductors ; Low power electronics ; Thin film circuits ; Thin film transistors ; Timing circuits ; Zinc oxide

Semiconducting Materials:712.1 ; Pulse Circuits:713.4 ; Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2

Web of Science

1.Shandong Univ, Shandong Technol Ctr Nanodevices & Integrat, Sch Integrated Circuits, Jinan 250100, Peoples R China
2.Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen 518055, Peoples R China
3.Univ Manchester, Dept Elect & Elect Engn, Manchester M13 9PL, England
4.Hanyang Univ, Dept Photon & Nanoelect, Ansan 15588, South Korea

Wang, Junjie,Lin, Xiaoyu,Li, Yuxiang,et al. One-volt oxide based complementary circuit[J]. AIP ADVANCES,2024,14(7).

Wang, Junjie.,Lin, Xiaoyu.,Li, Yuxiang.,Xin, Qian.,Song, Aimin.,...&Zhang, Jiawei.(2024).One-volt oxide based complementary circuit.AIP ADVANCES,14(7).

Wang, Junjie,et al."One-volt oxide based complementary circuit".AIP ADVANCES 14.7(2024).