Hot Carrier Nanowire Transistors at the Ballistic Limit

Kumar, Mukesh1; Nowzari, Ali1; Persson, Axel R.2; Jeppesen, Soren1; Wacker, Andreas3; Bastard, Gerald4; Wallenberg, Reine L.2; Capasso, Federico5; Maisi, Ville F.1; Samuelson, Lars1,6

2024-06-01

10.1021/acs.nanolett.4c01197

NANO LETTERS   影响因子和分区

1530-6984

1530-6992

We demonstrate experimentally nonequilibrium transport in unipolar quasi-1D hot electron devices reaching the ballistic limit at room temperature. The devices are realized with heterostructure engineering in nanowires to obtain dopant- and dislocation-free 1D-epitaxy and flexible bandgap engineering. We show experimentally the control of hot electron injection with a graded conduction band profile and the subsequent filtering of hot and relaxed electrons with rectangular energy barriers. The number of electrons passing the barrier depends exponentially on the transport length with a mean-free path of 200-260 nm, and the electrons reach the ballistic transport regime for the shortest devices with 70% of the electrons flying freely through the base electrode and the barrier reflections limiting the transport to the collector.

hot carrier transistors ballistic electrons bandgap engineering quantum mechanical transmission

SCI ; EI

英语

通讯

Knut and Alice Wallenberg (KAW) foundation[2016.0089] ; Swedish Research Council[2019-04111]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:001253345200001

AMER CHEMICAL SOC

20242616442264

Ballistics ; Electrons ; Hot electrons ; Nanowires ; Quantum theory ; Transmissions

Military Engineering:404.1 ; Mechanical Transmissions:602.2 ; Electricity: Basic Concepts and Phenomena:701.1 ; Nanotechnology:761 ; Mechanics:931.1 ; Quantum Theory; Quantum Mechanics:931.4 ; Solid State Physics:933

MATERIALS SCIENCE

Web of Science

1.Lund Univ, NanoLund & Div Solid State Phys, S-22100 Lund, Sweden
2.Lund Univ, NanoLund & Ctr Anal & Synth, S-22100 Lund, Sweden
3.Lund Univ, NanoLund & Div Math Phys, S-22100 Lund, Sweden
4.Lab Pierre Aigrain LPA, Phys Dept ENS PSL, F-75005 Paris, France
5.Harvard Univ, John A Paulson Sch Engn & Appl Sci, Cambridge, MA 02138 USA
6.Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen 518055, Peoples R China

Kumar, Mukesh,Nowzari, Ali,Persson, Axel R.,et al. Hot Carrier Nanowire Transistors at the Ballistic Limit[J]. NANO LETTERS,2024,24:7948-7952.

Kumar, Mukesh.,Nowzari, Ali.,Persson, Axel R..,Jeppesen, Soren.,Wacker, Andreas.,...&Samuelson, Lars.(2024).Hot Carrier Nanowire Transistors at the Ballistic Limit.NANO LETTERS,24,7948-7952.

Kumar, Mukesh,et al."Hot Carrier Nanowire Transistors at the Ballistic Limit".NANO LETTERS 24(2024):7948-7952.