南方科技大学知识苑(SUSTech KC): Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters

题名	Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters
作者	Jiang, Yang1,2 ; Du, FangZhou 1 ; Wen, KangYao1 ; He, JiaQi1 ; Wang, PeiRan1 ; Li, MuJun1 ; Tang, ChuYing 1; Zhang, Yi 1,2 ; Wang, ZhongRui 2; Wang, Qing1,3 ; Yu, HongYu1,3
通讯作者	Wang, ZhongRui; Wang, Qing; Yu, HongYu
发表日期	2024-06-10
DOI	10.1063/5.0208817
发表期刊	APPLIED PHYSICS LETTERS 影响因子和分区
ISSN	0003-6951
EISSN	1077-3118
卷号	124 期号:24
摘要	In this work, high threshold voltage and breakdown voltage E-mode GaN HEMTs using an Al:HfOx-based charge trapping layer (CTL) are presented. The developed GaN HEMTs exhibit a wide threshold modulation range of Delta V-TH similar to 17.8 V, which enables the achievement of enhancement-mode (E-mode) operation after initialization process owing to the high charge storage capacity of the Al:HfOx layer. The E-mode GaN HEMTs exhibit a high positive V-TH of 8.4 V, a high I-DS,I-max of 466 mA/mm, a low R-ON of 10.49 Omega mm, and a high on/off ratio of similar to 10(9). Moreover, the off-state breakdown voltage reaches up to 1100 V, which is primarily attributed to in situ O-3 pretreatment effectively suppressing and blocking leakage current. Furthermore, thanks to the V-TH of GaN HEMTs being tunable by initialization voltage using the proposed CTL scheme, we prove that the direct-coupled FET logic-integrated GaN inverters can operate under a variety of conditions (beta = 10-40 and V-DD = 3-15 V) with commendable output swing and noise margins. These results present a promising approach toward realizing the monolithic integration of GaN devices for power IC applications.
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	第一 ; 通讯
资助项目	National Natural Science Foundation of China10.13039/501100001809[62122004] ; National Natural Science Foundation of China[2023A1515030034] ; Research on mechanism of Source/Drain ohmic[JCYJ20220818100605012] ; Study on the reliability of GaN power devices["JCYJ20220530115411025","HZQB-KCZYZ-2021052"]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:001250813600002
出版者	AIP Publishing
ESI学科分类	PHYSICS
来源库	Web of Science
引用统计	被引频次[WOS]：1
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/787624
专题	工学院_深港微电子学院南方科技大学
作者单位	1.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China 2.Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong 999077, Peoples R China 3.Southern Univ Sci & Technol, Minist Educ, Engn Res Ctr Integrated Circuits Next Generat Comm, Shenzhen 518055, Peoples R China
第一作者单位	深港微电子学院
通讯作者单位	深港微电子学院; 南方科技大学
第一作者的第一单位	深港微电子学院
推荐引用方式 GB/T 7714	Jiang, Yang,Du, FangZhou,Wen, KangYao,et al. Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters[J]. APPLIED PHYSICS LETTERS,2024,124(24).
APA	Jiang, Yang.,Du, FangZhou.,Wen, KangYao.,He, JiaQi.,Wang, PeiRan.,...&Yu, HongYu.(2024).Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters.APPLIED PHYSICS LETTERS,124(24).
MLA	Jiang, Yang,et al."Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters".APPLIED PHYSICS LETTERS 124.24(2024).