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题名

Manipulating Molecular Stacking to Achieve High Electron Mobility in 2D Conjugated Ultra-Narrow Bandgap Non-Fullerene Acceptors with Absorption Beyond 1000 nm

作者
通讯作者Liao, Xunfan; Feng, Kui; Chen, Yiwang
发表日期
2024-06-01
DOI
发表期刊
ISSN
1616-301X
EISSN
1616-3028
摘要
["N-type organic semiconductors are essential for the advancement of organic electronic devices. However, in relation to extensive research on n-type and p-type polymers, studies on high-mobility n-type small-molecule semiconductors (SMSCs) are limited. Here, a series of ultra-narrow bandgap n-type SMSCs are developed on an A-D-A-type structure. These SMSCs feature an exceptionally large pi-conjugated area, leading to strong intramolecular charge transfer and robust pi-pi interactions. For the first time, central core and terminal halogenation are employed to control molecular surface electrostatic potential distribution, thereby regulating the pi-pi stacking area (S pi-pi) and studying their correlation. The research reveals that, in n-type SMSCs with an edge-on arrangement, introducing fluorine into the 2D central core can reduce the S pi-pi, which is detrimental to the electron mobility (mu e) of organic field-effect transistors (OFETs). Conversely, terminal chlorination facilitates electron injection and improves mu e. Consequently, DTPC-OD-4Cl, featuring shorter alkyl side chains and a non-fluorinated 2D central core and undergoing terminal chlorination, achieved the highest mu e of up to 0.52 cm2 V-1 s-1, ranking among the highest values reported for A-D-A type SMSCs. This work not only systematically investigated the influence of molecular structure on mobility but also provided novel insights for designing more efficient n-type SMSCs.","A series of DTPC-based A-D-A-type small molecules featuring super-large pi-conjugation area are developed, exhibiting n-type transport properties. Central core non-fluorinated molecules exhibited stronger pi-pi stacking, achieving superior electron mobility of 0.52 cm2 V-1 s-1 in an OFET device. This work demonstrates that expanding the pi-conjugated area and regulating electrostatic interactions hold great potential for developing high-performance n-type organic semiconductors. image"]
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收录类别
SCI ; EI
语种
英语
学校署名
通讯
资助项目
National Natural Science Foundation of China["52333006","51973032","21905043","22275078","52173171"] ; National Natural Science Foundation of China (NSFC)["20212ACB203005","20224ACB214002"] ; Jiangxi Provincial Natural Science Foundation[jxsq2019101051] ; Thousand Talents Plan of Jiangxi Province[14303519]
WOS研究方向
Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目
Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号
WOS:001250311300001
出版者
ESI学科分类
MATERIALS SCIENCE
来源库
Web of Science
引用统计
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/787666
专题工学院_材料科学与工程系
作者单位
1.Jiangxi Normal Univ, Coll Chem & Chem Engn, Key Lab Fluorine & Silicon Energy Mat & Chem, Minist Educ, 99 Ziyang Ave, Nanchang 330022, Peoples R China
2.Southern Univ Sci & Technol SUSTech, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
3.Forschungszentrum Julich, Inst Energie & Klimaforsch IEK 9 Grundlagen Elektr, D-52425 Julich, Germany
4.Chinese Univ Hong Kong, Dept Phys, Hong Kong 999077, Peoples R China
通讯作者单位材料科学与工程系
推荐引用方式
GB/T 7714
Liao, Xunfan,Liu, Mingtao,Xie, Wenchao,et al. Manipulating Molecular Stacking to Achieve High Electron Mobility in 2D Conjugated Ultra-Narrow Bandgap Non-Fullerene Acceptors with Absorption Beyond 1000 nm[J]. ADVANCED FUNCTIONAL MATERIALS,2024.
APA
Liao, Xunfan.,Liu, Mingtao.,Xie, Wenchao.,Wang, Junwei.,Zhu, Peipei.,...&Chen, Yiwang.(2024).Manipulating Molecular Stacking to Achieve High Electron Mobility in 2D Conjugated Ultra-Narrow Bandgap Non-Fullerene Acceptors with Absorption Beyond 1000 nm.ADVANCED FUNCTIONAL MATERIALS.
MLA
Liao, Xunfan,et al."Manipulating Molecular Stacking to Achieve High Electron Mobility in 2D Conjugated Ultra-Narrow Bandgap Non-Fullerene Acceptors with Absorption Beyond 1000 nm".ADVANCED FUNCTIONAL MATERIALS (2024).
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